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Número de pieza | APTM100H80FT1G | |
Descripción | MOSFET Power Module | |
Fabricantes | Microsemi | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de APTM100H80FT1G (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! APTM100H80FT1G
Full - Bridge
MOSFET Power Module
VDSS = 1000V
RDSon = 800mΩ typ @ Tj = 25°C
ID = 11A @ Tc = 25°C
34
Q1 Q3
52
61
Q2 Q4
79
8 10
11 NTC
12
Pins 3/4 must be shorted together
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Power MOS 8™ Fast FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
1000
11
8
68
±30
960
208
9
Unit
V
A
V
mΩ
W
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–5
1 page APTM100H80FT1G
Drain Current vs Source to Drain Voltage
25
20
TJ=125°C
15
10
TJ=25°C
5
0
0 0.3 0.6 0.9
VSD, Source to Drain Voltage (V)
1.2
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.7
0.6 0.9
0.5
0.7
0.4
0.5
0.3
0.2 0.3
0.1 0.1
0.05
0
0.00001
0.0001
0.001
Single Pulse
0.01
0.1
1
rectangular Pulse Duration (Seconds)
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
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5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet APTM100H80FT1G.PDF ] |
Número de pieza | Descripción | Fabricantes |
APTM100H80FT1G | MOSFET Power Module | Microsemi |
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