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Teilenummer | BSS123 |
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Beschreibung | N-Channel MOSFET | |
Hersteller | JCET | |
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Gesamt 5 Seiten JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
BSS123 N Channel MOSFET
V(BR)DSS
100 V
RDS(on)MAX
6Ω@10V
10Ω@4.5V
ID
0.17A
FEATURE
Surface Mount Package
High Density Cell Design for Extremely Low RDS(ON)
Voltage Controlled Small Signal Switch
Rugged and Reliable
SOT-23
1. GATE
2. SOURCE
3. DRAIN
APPLICATION
Small Servo Motor Controls
Power MOSFET Gate Drivers
Switching Application
MARKING
Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
N-MOSFET
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current (tp=10us)
Continous Source-Drain Diode Current
Power Dissipation
Thermal Resistance from Junction to Ambient (note 1)
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
Symbol
VDS
VGS
ID
IDM
IS
PD
RθJA
TJ
TSTG
TL
Value
100
±20
0.17
0.68
0.17
0.35
357
150
-55~+150
260
Unit
V
V
A
A
A
W
℃/W
℃
℃
℃
ZZZFMHOHFFRP
1
A-2,Apr,2015
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ BSS123 Schematic.PDF ] |
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