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PDF AP9575AGH Data sheet ( Hoja de datos )
| Número de pieza | AP9575AGH | |
| Descripción | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP9575AGH (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Advanced Power
Electronics Corp.
AP9575AGH/J
RoHS-compliant Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Higher Gate-Source Voltage
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
Description
G
D
S
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9575AGJ)
are available for low-profile applications.
BVDSS
RDS(ON)
ID
-60V
64mΩ
-17A
GD
S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
G
D
S
TO-251(J)
Rating
-60
+30
-17
-11
-60
36
0.29
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
3.5
62.5
110
Units
℃/W
℃/W
℃/W
Data and specifications subject to change without notice
1
200908033
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AP9575AGH.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AP9575AGH | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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| AP9575AGH-HF-3 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
| AP9575AGI-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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