DataSheet.es    


PDF WGP15G65 Data sheet ( Hoja de datos )

Número de pieza WGP15G65
Descripción Silicon N-Channel MOSFET
Fabricantes Winsemi 
Logotipo Winsemi Logotipo



Hay una vista previa y un enlace de descarga de WGP15G65 (archivo pdf) en la parte inferior de esta página.


Total 6 Páginas

No Preview Available ! WGP15G65 Hoja de datos, Descripción, Manual

WGP15G65 Product Description
Absolute Maximum Ratings
symbol
Parameter
VGE Gate-Emitter Voltage
Collector Current (continuous) at TC = 25°C
IC
Collector Current (continuous) at TC = 100°C
ICM(1)
Collector Current (pulsed)
Eas Single Pulse Energy TC= 25°C
PTOT
Total Dissipation at TC = 25°C
ESD ESD (Human Body Model)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(1)Pulse width limited by safe operating area
Thermal Characteristics
Symbol
RQJ C
RQJ A
Parameter
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Value
40
30
15
45
500
150
3
- 55 to 150
Unit
V
A
A
A
mJ
W
KV
Value
Min Typ
--
--
Max
0.75
62.5
Unit
/W
/W
Electrical Characteristics (TCASE= 25 °C UNLESS OTHERWISE SPECIFIED)
Symbol
Parameter
Test Conditions
BV(CES)
BV(ECR)
ICES
IGES
VGE(th)
VCE(SAT)
Clamped Voltage
Emitter Collector Break-down Voltage
Collector cut-off Current (VGE =0)
Gate-Emitter Leakage Current (VCE =0)
Gate Threshold Voltage
Collector-Emitter Saturation Voltage
IC=1mA,VGE =0,TC=25°C
IC = 75 mA, TC= 25°C
VCE=620V, VGE=0 ,TC=25°C
VGE =±10V,VCE = 0
VCE =VGE, IC = 250μA, TC=- 50°C
VCE =VGE, IC = 250μA, TC= 25°C
VCE =VGE, IC = 250μA, TC=150°C
VGE =5.5V, IC = 5 A, TC= 25°C
VGE =5.5V, IC = 5A, TC= 150°C
VGE =5.5V, IC = 10 A, TC= 25°C
VGE =5.5V, IC = 10 A, TC= 150°C
Min
650
20
-
-
2
1.8
1.5
-
-
-
-
Typ
-
30
5
±100
3.18
3.05
2.11
1.03
0.92
1.5
1.32
Max
-
-
-
-
4
3.5
3
1.2
1.2
1.7
1.5
Unit
V
V
uA
uA
V
V
V
V
V
V
V
Symbol
gfs (1)
Cies
Coes
Cres
Qg
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
Test Conditions
VCE =25V , IC=10 A
VCE=25V, f= 1MHz, VGE =0
VCE = 280V, IC =10 A, VGE=5V
Min.
25
-
-
-
-
Typ.
30
1196
211
3.3
21.4
Max.
-
-
-
-
-
Unit
S
pF
pF
pF
nC
Symbol
Parameter
Test Conditions
Min.
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
Copyright@W insemi Microelectronics Co., Ltd., All right reserved.
WINSEMI MICROELECTRONICS
Typ. Max. Unit
WT-G003-Rev.A0 Nov.2013
WINSEMI MICROELECTRONICS
1113

1 page




WGP15G65 pdf
WGP15G65 Product Description
TO-220C Package Dimension
E
P
B
b
ee
A
F
c
Q1
UnIt:mm
符号
A
B
b
c
d
D2
E
e
F
L
L2
Q
Q1
P
MIN MAX
4.30 4.70
1.10 1.40
0.70 0.95
0.40 0.65
15.2 16.2
9.00 9.40
9.70 10.10
2.39 2.69
1.25 1.40
12.60 13.60
2.80 3.20
2.60 3.00
2.20 2.60
3.50 3.80
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
www.winsemi.com Tel : 0755-82506288 Fax : 0755-82506299
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
5/6

5 Page










PáginasTotal 6 Páginas
PDF Descargar[ Datasheet WGP15G65.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
WGP15G65Silicon N-Channel MOSFETWinsemi
Winsemi

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar