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Teilenummer | WGA40G60 |
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Beschreibung | Low Loss IGBT | |
Hersteller | Winsemi | |
Logo | ||
Gesamt 7 Seiten Features
■ High current capability
■ low saturation voltage:(VCE(sat)=2.3@I C=40A)
■ High input impedance
■ Fast switching
■ RoHS compliant
Applications
■ Induction Heating
■ UPS
■ SMPS
■ PFC
WGA40G60
Low Loss IGBT
Absolute Maximum Ratings(Tc=25℃)
Symbol
Parameter
Value
VCES
IC
I CM(1)
VGES
PD
TJ
T STG
TL
Collector-Emitter Voltage
DC Collector Current
Pulsed Collector Current
Gate-Emitter Voltage
Tc=25℃
Tc=100℃
Tc=25℃
Maximum Power Dissipation
Tc=25℃
Maximum Power Dissipation
Operation Junction Temperature
Tc=100℃
Storage Temperature
Maximum Lead Temperature for Soldering Purposes,1/8 from case for 5
seconds
60 0
80
40
12 0
±20
29 0
11 6
-55~ 150
-55 ~ 150
30 0
Unit
V
A
A
A
V
W
W
℃
℃
℃
Thermal Characteristics
Symbol
Parameter
R QJC(IGBT) Therm al Resistance , Junction -to -Case
RQJC(Diode) Thermal Resistance, Junction-to-Case
RQJA Thermal Resistance , Junction-to -Ambient
Value
Min Typ Max
- - 0.4 3
1.4 5
- - 40
Unit
℃/W
℃/W
℃/W
Rev.A Jun.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right r eserved.
WGA40G60
Fig.1 9 Forward Characteristics
Fig. 20 Typical Reverse Current vs.Reverse Voltage
Fig.21 Stored Charge
Fig. 22 Reverse Recovery time
Fig.23 Transient Thermal Impedance of IGBT
Steady, keep you advance
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ WGA40G60 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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