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Teilenummer | BCX38 |
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Beschreibung | NPN Transistor | |
Hersteller | JCST | |
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Gesamt 3 Seiten JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BCX38 TRANSISTOR (NPN)
FEATURES
z High DC Current Gain
TO – 92
1.EMITTER
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
80
60
10
0.8
625
200
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
*Pulse test
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO
V(BR)CEO*
IC= 0.01mA,IE=0
IC=10mA,IB=0
80
60
V
V
V(BR)EBO
ICBO
IEBO
IE=0.01mA,IC=0
VCB=60V,IE=0
VEB=8V,IC=0
10
V
0.1 μA
0.1 μA
hFE(1)*
VCE=5V, IC=100mA
BCX38A
BCX38B
500
2000
BCX38C 5000
VCE=5V, IC=500mA
hFE(2) *
BCX38A
BCX38B
1000
4000
VCE(sat) *
VBE*
BCX38C
IC=800mA,IB=8mA
IC=800mA, VCE=5V
10000
1.25 V
1.8 V
www.cj-elec.com
1
C,Aug,2016
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Seiten | Gesamt 3 Seiten | |
PDF Download | [ BCX38 Schematic.PDF ] |
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