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PDF 1N1183 Data sheet ( Hoja de datos )

Número de pieza 1N1183
Descripción Power Silicon Rectifier Diodes
Fabricantes Vishay 
Logotipo Vishay Logotipo



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No Preview Available ! 1N1183 Hoja de datos, Descripción, Manual

1N1183, 1N3765, 1N1183A, 1N2128A Series
Vishay High Power Products
Power Silicon Rectifier Diodes,
35 A/40 A/60 A
DESCRIPTION/FEATURES
• Low leakage current series
• Good surge current capability up to 1000 A
• Can be supplied to meet stringent military, aerospace and
other high reliability requirements
• Compliant to RoHS directive 2002/95/EC
DO-203AB (DO-5)
PRODUCT SUMMARY
IF(AV)
35 A/40 A/60 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
1N1183
1N3765
IF(AV)
IFSM
TC
50 Hz
60 Hz
35 (1)
140 (1)
480
500 (1)
35 (1)
140 (1)
380
400 (1)
I2t 50 Hz
60 Hz
1140
1040
730
670
I2t
VRRM
Range
16 100
50 to 600 (1)
10 300
700 to 1000 (1)
Note
(1) JEDEC registered values
ELECTRICAL SPECIFICATIONS
1N1183A
40 (1)
150 (1)
765
800 (1)
2900
2650
41 000
50 to 600 (1)
1N2128A
60 (1)
140 (1)
860
900 (1)
3700
3400
52 500
50 to 600 (1)
UNITS
A
°C
A
A2s
A2s
V
VOLTAGE RATINGS
TYPE NUMBER
1N1183
1N1184
1N1185
1N1186
1N1187
1N1188
1N1189
1N1190
1N3765
1N3766
1N3767
1N3768
1N1183A
1N1184A
1N1185A
1N1186A
1N1187A
1N1188A
1N1189A
1N1190A
1N2128A
1N2129A
1N2130A
1N2131A
1N2133A
1N2135A
1N2137A
1N2138A
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
(TJ = - 65 °C TO 200 °C (2))
V
50 (1)
100 (1)
150 (1)
200 (1)
300 (1)
400 (1)
500 (1)
600 (1)
700 (1)
800 (1)
900 (1)
1000 (1)
VRM, MAXIMUM DIRECT
REVERSE VOLTAGE
(TJ = - 65 °C TO 200 °C (2))
V
50 (1)
100 (1)
150 (1)
200 (1)
300 (1)
400 (1)
500 (1)
600 (1)
700 (1)
800 (1)
900 (1)
1000 (1)
Notes
(1) JEDEC registered values
(2) For 1N1183 Series and 1N3765 Series TC = - 65 °C to 190 °C
• Basic type number indicates cathode to case. For anode to case, add “R” to part number, e.g., 1N1188R, 1N3766R, 1N1186AR, 1N2135AR
Document Number: 93492
Revision: 25-May-09
For technical questions, contact: [email protected]
www.vishay.com
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1N1183 pdf
1N1183, 1N3765, 1N1183A, 1N2128A Series
Power Silicon Rectifier Diodes, Vishay High Power Products
35 A/40 A/60 A
Fig. 9 - Maximum Forward Voltage vs. Forward Current,
1N1183A Series
Fig. 12 - Maximum Allowable Case Temperature vs.
Average Forward Current, 1N2128A Series
Fig. 10 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 1N1183A Series
Fig. 13 - Maximum Low Level Forward Power Loss vs.
Average Forward Current, 1N2128A Series
Fig. 11 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 1N2128A Series
Fig. 14 - Maximum High Level Forward Power Loss vs.
Average Forward Current, 1N2128A Series
Document Number: 93492
Revision: 25-May-09
For technical questions, contact: [email protected]
www.vishay.com
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