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CS10N60A8HD Schematic ( PDF Datasheet ) - Huajing Microelectronics

Teilenummer CS10N60A8HD
Beschreibung Silicon N-Channel Power MOSFET
Hersteller Huajing Microelectronics
Logo Huajing Microelectronics Logo 




Gesamt 10 Seiten
CS10N60A8HD Datasheet, Funktion
Silicon N-Channel Power MOSFET
CS10N60 A8HD
R
General Description
CS10N60 A8HD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
switching performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for
system miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data:39nC)
l Low Reverse transfer capacitances(Typical:16pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
VESD(G-S)
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD (TC=25)
RDS(ON)Typ
600
10
125
0.6
Rating
600
10
8
40
±30
800
80
4.0
5.0
125
1.0
4000
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
V
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 15V0 1






CS10N60A8HD Datasheet, Funktion
CS10N60 A8HD
R
1.2 1.15
1.1 1.1
1 1.05
0.9
0.8 VGS=0V
ID=250μA
0.7
-100 -50
0
50 100 150 200
Tj, Junction temperature , C
Figure 11 Typical Theshold Voltage vs Junction Temperature
2500
2000
VGS=0V , f=1MHz
Ciss=Cgs+Cgd
Coss=Cds+Cgd
Crss=Cgd
1500
1000
Coss
Ciss
1
0.95
VGS=0V
ID=250μA
0.9
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction temperature , C
Figure 12 Typical Breakdown Voltage vs Junction Temperature
15
12 VDS=480V
ID=10A
9
6
500
Crss
0
0
10 20 30 40 50
Vds , Drain - Source Voltage , Volts
60
Figure 13 Typical Capacitance vs Drain to Source Voltage
6
3
0
0 15 30 45 60 75
Qg , Total Gate Charge , nC
Figure 14 Typical Gate Charge vs Gate to Source Voltage
100
5 STARTING Tj = 25
4 10 STARTING Tj = 150
3
+150
2 +25
-55
1
0
0.4
VGS=0V
0.5 0.6 0.7 0.8 0.9
1
Vsd , Source - Drain Voltage , Volts
1.1
Figure 15 Typical Body Diode Transfer Characteristics
1
If R=0: tAV=(L* IAS) / (1.38VDSS-VDD)
If R0: tAV=(L/R) In[IAS*R/ (1.38VDSS-VDD)+1]
R equals total Series resistance of Drain circuit
0.1
1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01
tav , Time in Avalanche , Seconds
Figure 16 Unclamped Inductive Switching Capability
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 6 of 1 0 20 15V0 1

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