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CS10N60FA9R Schematic ( PDF Datasheet ) - Huajing Microelectronics

Teilenummer CS10N60FA9R
Beschreibung Silicon N-Channel Power MOSFET
Hersteller Huajing Microelectronics
Logo Huajing Microelectronics Logo 




Gesamt 10 Seiten
CS10N60FA9R Datasheet, Funktion
Silicon N-Channel Power MOSFET
CS10N60F A9R
R
General Description
CS10N60F A9R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features
l Fast Switching
l Low ON Resistance(Rdson0.9)
l Low Gate Charge (Typical Data:32nC)
l Low Reverse transfer capacitances(Typical:7.5pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
dv/dt a3
PD
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD(TC=25)
RDS(ON)Typ
600
10
40
0.68
Rating
600
10
6.3
40
±30
580
5.0
40
0.32
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
V/ns
W
W/
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 15V0 1






CS10N60FA9R Datasheet, Funktion
CS10N60F A9R
R
1.15
1.1
1.05
1
0.95
0.9 VGS=0V
0.85 ID=250μA
0.8
0.75
0.7
0.65
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction temperature , C
Figure 10 Typical Theshold Voltage vs Junction Temperature
1.15
1.05
0.95
VGS=0V
ID=250μA
0.85
0.75
-55 -30
-5 20 45 70 95 120 145 170
Tj, Junction temperature , C
Figure 11 Typical Breakdown Voltage vs Junction Temperature
VGS=0V , f=1MHz
Ciss=Cgs+Cgd
Coss=Cds+Cgd
Crss=Cgd
Ciss
Coss
Crss
Figure 12 Typical Capacitance vs Drain to Source Voltage
12
VDS=480V
10
ID=10A
8
6
4
2
0
0 8 16 24 32 40
Qg , Total Gate Charge , nC
Figure 13 Typical Gate Charge vs Gate to Source Voltage
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 6 of 1 0 20 15V0 1

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