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PDF VLA551K-01R Data sheet ( Hoja de datos )

Número de pieza VLA551K-01R
Descripción DRIVER FOR IGBT MODULES
Fabricantes Isahaya Electronics 
Logotipo Isahaya Electronics Logotipo



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HYBRID IC
VLA551K-01R
DRIVER FOR IGBT MODULES
DESCRIPTION
VLA551K-01R is a hybrid integrated circuit designed for driving
n-channel IGBT modules in any gate-amplifier application.
OUTLINE DRAWING
This device include the isolated type DC-DC converter for a
Gate drive. Therefore design of the gate power supply is not
63.0MAX
required.
The system of built-in short circuit protection provide a margin
to time by function to maintain reverse bias for a predetermined
time after the detection of short circuit.
Recommended IGBT modules:
VCES=600V series up to 600A class
VCES=1200V series up to 450A class
VCES=1700V series up to 400A class
FEATURES
•Built-in the isolated type DC-DC converter for gate drive
•SIP outline allows more space on mounting area
2.54
5.0MAX
1
0.75 +/-0.1
5.0MAX
22
•Built-in short circuit protection (With fault output)
•Variable fall time on activity of short circuit protection
•Electrical isolation voltage between input and output is 4000Vrms (for 1minute)
•HCMOS compatible input.
Dimensions: mm
4.5MAX
0.5 +0.2/-0.1
11.5MAX
15.5MAX
APPLICATIONS
To drive IGBT modules for inverter or AC servo systems application
BLOCK DIAGRAM
1
VD 2
DCAC
CONVERTER
Gi 3
4
VI+ 6
1k
REGULATOR
13 Vcc
14
LATCH
DETECT
21 ttrip
CONTROL PIN
22 DETECT PIN
INTERFACE
TIMER&RESET
CIRCUIT
15 GND
17 Vo
VI- 7
240
COUPLER LED ON:GATE OUTPUT H
COUPLER LED OFF:GATE OUTPUT L
GATE SHUT-DOWN
CIRCUIT
18 SHUT-DOWN
SPEED CONTROL
20 FAULT OUTPUT
16 VEE

1 page




VLA551K-01R pdf
DEFFINITION OF CHARACTERISTICS
(1)SWITCHING OPERATION
VI
HYBRID IC
VLA551K-01R
DRIVER FOR IGBT MODULES
(2)OPERATION OF SHORT CIRCUIT PROTECTION
VI 0V
VO tr
tPLH
tf
tPHL
90%
50%
10%
VO 0V
-5V
Pin 20 output
0V
ttrip1,2
ttimer
10V
10V
APPLICATION EXAMPLE
22
1
C1 2
VD
RG
17
VIN
HC04 etc.
VIN=5V
3 13
14
4 VLA551K-01R
C2
15
6 C3
16
7 Ctrip
21
Cs
18
20 3.3kΩ
4.7kΩ
D1
CM400DY-34A etc.
Dz2
Dz3
Dz1
VD=15V +/-5%
VIN=5V +/-5%
C1 : 100uF (Low impedance)
C2 : 100uF (Low impedance)
C3 : 100uF (Low impedance)
Ctrip : Depend on RG
Cs : Depend on surge voltage
Dz1 : 30V
Dz2,3 : 18V
D1 : Fast recovery diode (trr : 200ns Max)
PRECAUTION
(1) Voltage compensate capacitors are expected to be located as close as possible to the Hybrid IC.
(2) Minimize the area of closed circuit of gate circuit so as not to be affected by induction noise.
(3) D1 requires approximately the same voltage of power modules.
(4) When recovery current flow in D1 , pin 22 is applied high voltage .
In that case , counterplan for protection which insert a zener diode between pin
22 and 16 are necessary like above diagram.
(5) When you make late speed of reverse bias at the time of short circuit protection operation,
please adjust and connect a capacitor between pin 16 and 18.

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