|
|
Número de pieza | MTB030N10RQ8 | |
Descripción | N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | Cystech Electonics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTB030N10RQ8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB030N10RQ8
Spec. No. : C053Q8
Issued Date : 2016.11.04
Revised Date :
Page No. : 1/9
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Repetitive Avalanche Rated
• Pb-free & Halogen-free package
BVDSS
ID @ TA=25°C, VGS=10V
RDS(ON)@VGS=10V, ID=10A
RDS(ON)@VGS=4.5V, ID=8A
100V
6.2A
22.7 mΩ(typ)
27.5 mΩ(typ)
Symbol
MTB030N10RQ8
Outline
DD
SOP-8
DD
G:Gate
D:Drain
S:Source
Pin 1
G
SSS
Ordering Information
Device
MTB030N10RQ8-0-T3-G
Package
Shipping
SOP-8
(RoHS compliant & Halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB030N10RQ8
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C053Q8
Issued Date : 2016.11.04
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
1.2
Ciss
1.0
ID=1mA
C oss
100
10
0
f=1MHz
Crss
5 10 15 20 25
VDS, Drain-Source Voltage(V)
30
Forward Transfer Admittance vs Drain Current
100
VDS=10V
10
1 VDS=15V
0.8
0.6 ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
6
4
0.1
0.01
0.001
Pulsed
Ta=25°C
0.01 0.1
1
10
ID, Drain Current(A)
100
2 VDS=80V
ID=10A
0
0 5 10 15 20 25 30
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
RDS(ON)
Limited
10
100μs
1 1ms
10ms
0.1 TA=25°C, Tj=150°C
VGS=10V,RθJA=40°C/W
Single Pulse
100ms
1s
DC
0.01
0.01
0.1 1 10 100
VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Junction Temperature
8
6
4
2
TA=25°C,RθJA=40°C/W,VGS=10V
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
MTB030N10RQ8
CYStek Product Specification
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet MTB030N10RQ8.PDF ] |
Número de pieza | Descripción | Fabricantes |
MTB030N10RQ8 | N-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |