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PDF MTB013N10RJ3 Data sheet ( Hoja de datos )
| Número de pieza | MTB013N10RJ3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB013N10RJ3
Spec. No. : C056J3
Issued Date : 2016.11.02
Revised Date :
Page No. : 1/ 9
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=15A
RDS(ON)@VGS=4.5V, ID=10A
100V
42A
9A
12.5mΩ(typ)
14.5 mΩ(typ)
Symbol
MTB013N10RJ3
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
MTB013N10RJ3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB013N10RJ3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C056J3
Issued Date : 2016.11.02
Revised Date :
Page No. : 5/ 9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
C oss
Threshold Voltage vs Junction Tempearture
1.4
1.2
1 ID=1mA
0.8
100
Crss
10
0
5 10 15 20 25 30 35 40 45 50
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
VDS=10V
10
0.6
ID=250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=20V
8 VDS=50V
6
1 VDS=15V
4
VDS=80V
0.1
0.01
0.001
1000
Ta=25°C
Pulsed
0.01 0.1
1
10
ID, Drain Current(A)
Maximum Safe Operating Area
100
RDSON
100 Limited
100μs
1ms
10 10ms
100ms
1 TC=25°C, Tj=175°C
VGS=10V, RθJC=2.5°C/W
Single Pulse
1s
DC
0.1
0.1 1 10 100
VDS, Drain-Source Voltage(V)
1000
2
ID=15A
0
0 10 20 30 40 50 60
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
50
45
40
35
30
25
20
15
10 Tj(max)=175°C,VGS=10V, RθJC=2.5°C/W
5 Single Pulse
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTB013N10RJ3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB013N10RJ3.PDF ] | |
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