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PDF MTB011N10RQ8 Data sheet ( Hoja de datos )
| Número de pieza | MTB011N10RQ8 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB011N10RQ8
Spec. No. : C169Q8
Issued Date : 2016.11.04
Revised Date :
Page No. : 1/9
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Repetitive Avalanche Rated
• Pb-free & Halogen-free package
BVDSS
ID @ TA=25°C, VGS=10V
ID @ TA=70°C, VGS=10V
RDS(ON)@VGS=10V, ID=11.5A
RDS(ON)@VGS=4.5V, ID=9.5A
100V
10.7A
8.6A
7.5 mΩ(typ)
9.8 mΩ(typ)
Symbol
MTB011N10RQ8
Outline
DD
SOP-8
DD
G：Gate
D：Drain
S：Source
Pin 1
G
SSS
Ordering Information
Device
MTB011N10RQ8-0-T3-G
Package
Shipping
SOP-8
(RoHS compliant & Halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB011N10RQ8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C169Q8
Issued Date : 2016.11.04
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
Ciss
C oss
100
10
0
f=1MHz
Crss
5 10 15 20 25 30 35 40 45
VDS, Drain-Source Voltage(V)
50
1.2
1.0 ID=1mA
0.8
0.6 ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
VDS=10V
10
1 VDS=15V
Gate Charge Characteristics
10
8 VDS=20V
6 VDS=50V
4
VDS=80V
0.1
0.01
0.001
Pulsed
Ta=25°C
0.01 0.1
1
10
ID, Drain Current(A)
100
2
ID=11.5A
0
0 10 20 30 40 50 60 70 80
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
RDS(ON)
Limited
10
100μs
1 1ms
10ms
0.1 TA=25°C, Tj=150°C
VGS=10V,RθJA=40°C/W
Single Pulse
100ms
1s
DC
0.01
0.01
0.1 1 10 100
VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Junction Temperature
12
10
8
6
4
2 TA=25°C,RθJA=40°C/W,VGS=10V
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
MTB011N10RQ8
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB011N10RQ8.PDF ] | |
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