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PDF AUIRF7103Q Data sheet ( Hoja de datos )
| Número de pieza | AUIRF7103Q | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Features
l Advanced Planar Technology
l Dual N Channel MOSFET
l Low On-Resistance
l Dynamic dV/dT Rating
l 175°C Operating Temperature
l Fast Switching
l Lead-Free, RoHS Compliant
l Automotive Qualified*
AUTOMOTIVE GRADE
AUIRF7103Q
HEXFET® Power MOSFET
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
V(BR)DSS
RDS(on) max.
ID
50V
130m
3.0A
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are
well known for, provides the designer with an ex-
tremely efficient and reliable device for use in Auto-
motive and a wide variety of other applications.
SO-8
AUIRF7103Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 4.5V
cContinuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
ePower Dissipation
Linear Derating Factor
Gate-to-Source Voltage
fSingle Pulse Avalanche Energy (Thermally Limited)
cAvalanche Current
hRepetitive Avalanche Energy
gPeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max.
3.0
2.5
25
2.4
16
± 20
22
See Fig. 16c, 16d, 19, 20
12
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
RJL Junction-to-Drain Lead
fgRJA Junction-to-Ambient
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
December 5, 2012
1 page  
AUIRF7103Q
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
10
VDS, Drain-to-Source Voltage (V)
100
12 ID = 2.0A
9
VDS = 40V
VDS = 25V
VDS = 10V
6
3
0
0369
QG, Total Gate Charge (nC)
12
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
TJ = 175° C
1
TJ = 25° C
0.1
0.4
VGS = 0 V
0.6 0.8 1.0
VSD ,Source-to-Drain Voltage (V)
1.2
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
1 100μsec
1msec
0.1
0.01
Tc = 25°C
Tj = 175°C
Single Pulse
01
10msec
10 100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
December 5, 2012
5 Page 
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
AUIRF7103Q
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
14.40 ( .566 )
12.40 ( .488 )
www.irf.com
11
December 5, 2012
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet AUIRF7103Q.PDF ] | |
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