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AH125 Schematic ( PDF Datasheet ) - TriQuint

Teilenummer AH125
Beschreibung High Linearity InGaP HBT Amplifier
Hersteller TriQuint
Logo TriQuint Logo 




Gesamt 14 Seiten
AH125 Datasheet, Funktion
Applications
Repeaters
Mobile Infrastructure
LTE / WCDMA / EDGE / CDMA
AH125
½ W High Linearity InGaP HBT Amplifier
3-pin SOT-89 Package
Product Features
400 − 3600 MHz
+28 dBm P1dB
+45 dBm Output IP3
16.2 dB Gain @ 2140 MHz
150 mA current draw
+5 V Single Supply
MTTF > 100 Years
Lead-free/Green/RoHS-compliant SOT-89 Package
Class 2 HBM ESD rating (>2kV)
Functional Block Diagram
GND
4
1
RF IN
2
GND
3
RF OUT
General Description
The AH125 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT
is able to achieve high performance across a broad
range with +45 dBm OIP3 and +28 dBm of compressed
1dB power while drawing 150 mA current. The AH125 is
available in a lead-free/green/RoHS-compliant SOT-89
package. All devices are 100% RF and DC tested.
The AH125 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity, medium
power, and high efficiency are required. Internal biasing
allows the AH125 to maintain high linearity over
temperature and operate directly off a single +5V supply.
This combination makes the device an excellent
candidate for transceiver line cards in current and next
generation multi-carrier 3G base stations or repeaters.
Pin Configuration
Pin No.
1
3
2,4
Symbol
Vbias
RFin
RFout/Vcc
Not Recommended for
New Designs
Recommended Replacement
Part: TQP7M9102
Datasheet: Rev B 05-02-13
© 2013 TriQuint
Ordering Information
Part No.
Description
AH125-89G
½W High Linearity Amplifier
Standard T/R size = 1000 pieces on a 7” reel.
- 1 of 14 -
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AH125 Datasheet, Funktion
1805-1880 MHz Application Circuit
AH125
½ W High Linearity InGaP HBT Amplifier
Trace Cut
C1
C20
R20
R1
C8
C4
C3
R2 C2
Notes:
1. The primary RF microstrip line is 50 .
2. Components shown on the silkscreen but not on the schematic are not used.
3. 0 jumpers can be replaced with copper trace in target application.
4. The edge of C9 is placed at 250 mil from AH125 RFout pin. (25.5 o at 1845
MHz)
5. The edge of R1 is placed against the edge of C10.
6. The edge of C10 is placed at 30 mil from AH125 RFin pin. (3.1 o at 1845 MHz)
Typical Performance 1805-1880 MHz
Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25°C, tuned application circuit
Frequency
Conditions
1805
1842
1880
Gain
17.8 18.2 18.1
Input Return Loss
9.5 16.5 17.0
Output Return Loss
9.4 8.4 7.8
ACLR
Pout = +18 dBm, Note 1
-51 -51 -49
Output P1dB
+28
+27.9
+27.8
Output IP3
Pout=+14 dBm/tone, Δf=1 MHz
+44
+45 +43.5
Notes:
1. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB at 0.01% Probability, 3.84 MHz.
MHz
dB
dB
dB
dBc
dBm
dBm
Datasheet: Rev B 05-02-13
© 2013 TriQuint
- 6 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com

6 Page









AH125 pdf, datenblatt
Pin Configuration and Description
AH125
½ W High Linearity InGaP HBT Amplifier
GND
4
1
RF IN
2
GND
3
RF OUT
Pin No.
1
2, 4
3
Symbol
RF IN
GND
RFout / Vcc
Description
RF Input. Requires external match for optimal performance. External DC Block
required.
RF/DC Ground Connection
RF Output. Requires external match for optimal performance. External DC Block
and supply voltage is required.
Evaluation Board PCB Information
TriQuint PCB 1071363 Material and Stack-up
0.014"
0.062" ± 0.006"
Finished Board
Thickness
0.014"
Nelco N-4000-13
εr=3.7 typ.
1 oz. Cu top layer
1 oz. Cu inner layer
Core
Nelco N-4000-13
1 oz. Cu inner layer
1 oz. Cu bottom layer
50 Ohm Lines: Width=28 mils
Spacing=28 mils
Datasheet: Rev B 05-02-13
© 2013 TriQuint
- 12 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com

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