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PDF BT134-600E Data sheet ( Hoja de datos )
| Número de pieza | BT134-600E | |
| Descripción | Triacs | |
| Fabricantes | Inchange Semiconductor | |
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INCHANGE Semiconductor
isc Triacs
isc Product Specification
BT134-600E
FEATURES
·With TO-126P package
·Designed for use in general purpose bidirectional switching and phase
control applications , which are intended to be interfaced directly to
microcontrollers , logic integrated circuits and other low power gate
trigger circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak off-state voltage
IT(RMS) RMS on-state current (full sine wave)
ITSM Non-repetitive peak on-state current
PGM Peak gate power dissipation
PG(AV) Average gate power dissipation
Tj Operating junction temperature
Tstg Storage temperature
MIN
600
600
4
25
5
0.5
125
-45~150
UNIT
V
V
A
A
W
W
℃
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
IRRM
IDRM
Repetitive peak reverse current
Repetitive peak off-state current
Ⅰ
VR=VRRM,
VR=VRRM, Tj=125℃
VD=VDRM,
VD=VDRM, Tj=125℃
0.01
0.2
mA
0.01
0.2
mA
10
IGT Gate trigger current
Ⅱ
VD=12V; IT= 0.1A
Ⅲ
10
mA
10
Ⅳ 25
VTM On-state voltage
IT= 5A
1.7 V
IH Holding current
IGT= 0.1A, VD= 12V
15 mA
VGT Gate trigger voltage
VD=12V; IT= 0.1A
1.5 V
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
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