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2P4M-D Schematic ( PDF Datasheet ) - Inchange Semiconductor

Teilenummer 2P4M-D
Beschreibung Thyristors
Hersteller Inchange Semiconductor
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Gesamt 2 Seiten
2P4M-D Datasheet, Funktion
isc Thyristors
INCHANGE Semiconductor
2P4M-D
DESCRIPTION
·The 2P4M is P-gate all diffused plastic molded type SCR
granted average on-state current 2A(TC=77)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Highly sensitive triggering levels
·Solid state switches etc
·Automatic gas lighter,battery charger
·For capacitive discharge ignitions, motor control
in kitchen aids, over voltage crowbar protection
in low power supplies applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM
IT(AV)
ITSM
PG(AV)
Tj
Repetitive peak reverse voltage
On-state current 180 °
conduction angle
Non-repetitive surge peak
on-state current t= 20ms
Average gate power dissipation
Tj = 125
Junction temperature
Tstg Storage temperature
MIN
400
400
2
20
0.1
125
-40 to +
150
UNIT
V
V
A
A
W
isc websitewww.iscsemi.cn
isc & iscsemi is registered trademark





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