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Teilenummer | 3CA168 |
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Beschreibung | Silicon PNP Power Transistor | |
Hersteller | Inchange Semiconductor | |
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Gesamt 2 Seiten INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
·Good Linearity of hFE
APPLICATIONS
·Audio frequency power amplifier applications
·Recommend for 45-50W audio frequency amplifier
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-8
A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
-0.8 A
80 W
150 ℃
Tstg Storage Temperature Range -55~150 ℃
isc Product Specification
3CA168
isc website:www.iscsemi.com
isc & iscsemi is registered trademark
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ 3CA168 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
3CA168 | Silicon PNP Power Transistor | Inchange Semiconductor |
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