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PDF 3DD102 Data sheet ( Hoja de datos )
| Número de pieza | 3DD102 | |
| Descripción | Silicon NPN Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 3DD102 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD102
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.)
·DC Current Gain-
: hFE= 20(Min.)@IC= 2A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.8V(Max)@ IC= 2.5A
APPLICATIONS
·Designed for power amplifier , DC Transform T-Shirt
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
150 V
VCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
5A
PC Collector Power Dissipation@TC=75℃ 50
W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2.0 ℃/W
isc website： www.iscsemi.com
1 isc & iscsemi is registered trademark
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 3DD102.PDF ] | |
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