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PDF KTD1882 Data sheet ( Hoja de datos )
| Número de pieza | KTD1882 | |
| Descripción | EPITAXIAL PLANAR NPN TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de KTD1882 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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SEMICONDUCTOR
TECHNICAL DATA
AUDIO FREQUENCY POWER AMPLIFIER
LOW SPEED SWITCHING
FEATURES
ᴌComplementary to KTB1772.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
DC
Pulse (Note)
IC
ICP
Base Current (DC)
IB
Collector Power Dissipation
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
Note : Pulse Width ⏊10mS, Duty Cycle⏊50%.
RATING
40
30
5
3
7
0.6
625
150
-55ᴕ150
UNIT
V
V
V
A
A
mW
ᴱ
ᴱ
KTD1882
EPITAXIAL PLANAR NPN TRANSISTOR
BC
K
E
G
D
H
FF
123
N DIM MILLIMETERS
A 4.70 MAX
B 4.80 MAX
C 3.70 MAX
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
J 14.00 +_0.50
K 0.55 MAX
L 2.30
M 0.45 MAX
N 1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter-Cut-off Current
DC Current Gain *
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage
*
Current Gain Bandwidth Product
Collector Output Capacitance
ICBO
IEBO
hFE(1)
hFE(2) (Note)
VCE(sat)
VBE(sat)
fT
Cob
VCB=30V, IE=0
VEB=3V, IC=0
VCE=2V, IC=20mA
VCE=2V, IC=1A
IC=2A, IB=0.2A
IC=2V, IB=0.2A
VCE=5V, IC=0.1A
VCB=10V, IE=0, f=1MHz
* Pulse Test : Pulse Widthᴪ350ỌS, Duty Cycleᴪ2% Pulsed
Note: hFE(2) Classification O:100ᴕ200 , Y:160ᴕ320 , GR:200ᴕ400
MIN.
-
-
30
100
-
-
-
-
TYP.
-
-
150
160
0.3
1.0
90
45
MAX.
1
1
-
400
0.5
2.0
-
-
UNIT
ỌA
ỌA
V
V
MHz
pF
2000. 12. 8
Revision No : 0
1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet KTD1882.PDF ] | |
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