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Teilenummer | 2SD2102 |
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Beschreibung | Silicon NPN Power Transistor | |
Hersteller | Inchange Semiconductor | |
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Gesamt 2 Seiten INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2102
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
·High DC Current Gain
: hFE= 1000(Min) @ IC= 2A, VCE= 3V
APPLICATIONS
·Designed for low frequency power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60 V
VCEO
Collector-Emitter Voltage
60 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
4A
ICM Base Current-Peak
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
8A
2
W
25
150 ℃
Tstg Storage Temperature Range
-55~150 ℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ 2SD2102 Schematic.PDF ] |
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