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2SD2102 Schematic ( PDF Datasheet ) - Inchange Semiconductor

Teilenummer 2SD2102
Beschreibung Silicon NPN Power Transistor
Hersteller Inchange Semiconductor
Logo Inchange Semiconductor Logo 




Gesamt 2 Seiten
2SD2102 Datasheet, Funktion
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2102
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
·High DC Current Gain
: hFE= 1000(Min) @ IC= 2A, VCE= 3V
APPLICATIONS
·Designed for low frequency power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60 V
VCEO
Collector-Emitter Voltage
60 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
4A
ICM Base Current-Peak
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
8A
2
W
25
150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
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