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PDF RQ3E110AJ Data sheet ( Hoja de datos )
| Número de pieza | RQ3E110AJ | |
| Descripción | Nch 30V 24A Middle Power MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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RQ3E110AJ
Nch 30V 24A Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
11.7mΩ
±24A
15W
lFeatures
1) Low on - resistance.
2) Small Surface Mount Package.
3) Pb-free lead plating ; RoHS compliant
lOutline
HSMT8
lInner circuit
Datasheet
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
12
3000
Taping code
TB
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
E110AJ
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
30 V
Continuous drain current
Tc = 25°C
Ta = 25°C
ID*1
ID
±24 A
±11 A
Pulsed drain current
IDP*2 ±44 A
Gate - Source voltage
VGSS
±12 V
Avalanche current, single pulse
IAS*3 11 A
Avalanche energy, single pulse
EAS*3
4.5 mJ
Power dissipation
PD*1 15 W
PD*4 2.0 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/11
20160629 - Rev.002
1 page  
RQ3E110AJ
lElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Datasheet
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs. Junction
Temperature
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
5/11
20160629 - Rev.002
5 Page 
RQ3E110AJ
lDimensions
Datasheet
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
11/11
20160629 - Rev.002
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet RQ3E110AJ.PDF ] | |
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