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IJW120R070T1 Schematic ( PDF Datasheet ) - Infineon

Teilenummer IJW120R070T1
Beschreibung Silicon Carbide-Junction Field Effect Transistor
Hersteller Infineon
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Gesamt 20 Seiten
IJW120R070T1 Datasheet, Funktion
SiC- JFET
Silicon Carbide- Junction Field Effect Transistor
CoolSiC
1200 V CoolSiCPower Transistor
IJW120R070T1
Final Datasheet
Rev. 2.0, <2013-09-11>
Power Management & Multimarket






IJW120R070T1 Datasheet, Funktion
Silicon Carbide JFET
IJW120R070T1
Application considerations
1.3.3 Reverse biased behavior
The monolithically integrated body diode shows a switching performance close to that of an external SiC
schottky barrier diodes, renowned for their zero reverse recovery characteristic. Figure 5 (reverse recovery
characteristic ISD= 2 A left and ISD= 10 A; Tj= 150 °C; Vbulk=400 V; RG, external = (T1) 3.3 , (T2) 10 ) shows the
reverse recovery characteristic of the monolithic integrated body diode of the JFET. The reverse recovery
charge is load current independent. To avoid any additional losses during hard commutation of the body diode,
it is recommended to couple the gate of the switch (acting as diode) with a very low external gate resistor to the
gate driver.
VGS
VDS
IDS
VGS
VDS
IDS
RG external
T1
LLoad
RG external
T2
VDS
VGS
10m
IDS
Figure 5:
reverse recovery characteristic ISD= 2 A left and ISD= 10 A; Tj= 150 °C; Vbulk=400 V; RG, external = (T1) 3.3 ,
(T2) 10
Due to the material properties of SiC the forward voltage drop Vf of the internal body diode is significantly higher
compared to a SiC schottky barrier diode. Therefore, active turn-on of the channel of the JFET during reverse
operation (synchronous rectification) is the preferred way of operation.
1.3.4 Short circuit ruggedness
Due to excellent material properties and a very high temperature level for intrinsic carrier generation the device
shows extremely good short circuit ruggedness.
1.3.5 Switching and conduction losses
The switching energies are typically one order of magnitude lower than the losses of IGBTs. It is noteworthy to
consider that the JFET, as pure majority carrier device, has no forward knee voltage and can be used on its
ohmic characteristic both in forward and reverse direction.
Nevertheless, the JFET shows a strong dependency of the switching energies as function of the used gate
resistor. A low resistive value of the gate resistor is recommended to operate the JFET at optimal conditions.
The conduction losses in comparison to Super Junction MOSFET’s are less temperature dependent. A factor of
only 1.6 between 25 °C and 100 °C is measurable.
1.4 Environmental Conditions
The parts are proofed according to IEC 60721-3-4 (4K4H). (Low air temperature -20 °C; High air temperature
+55 °C; Low relative humitidy 4 %; High relative humitidy 100 %; Low absolute humitidy 0.9 g/ m³; High absolute
humitidy 36 g/ m³…)
Final Datasheet
6 Rev. 2.0, <2013-09-11>

6 Page









IJW120R070T1 pdf, datenblatt
Table 13
Typical gate charge
5
0
-5 ID = 25A
-10
-15 ID = 2A
-20
-100 -80 -60 -40 -20 0 20
QG [nC]
Silicon Carbide JFET
IJW120R070T1
Electrical characteristics diagrams
Typical breakdown voltage
1 620
1 610
1 600
1 590
1 580
1 570
1 560
1 550
1 540
-50 0 50 100 150 200
Tj [°C]
VGS= ƒ(QG ); VDS= 800 V; parameter: IDS
VBR(dss)= ƒ(Tj ); IDS= 1 mA
Table 14
Typical capacitances
10 000
1 000
Ciss
100
10
0
Coss
Crss
250 500
VDS [V]
750 1000
Typical stored energy in Coss
60
50
40
30
20
10
0
0
250 500 750
VDS [V]
1000
Ciss= ƒ(VDS ); VGS= -19 V; f= 1 MHz
Coss= ƒ(VDS ); VGS= -19 V; f= 1 MHz
Crss= ƒ(VDS ); VGS= -19 V; f= 1 MHz
Eoss= ƒ(VDS )
Final Datasheet
12 Rev. 2.0, <2013-09-11>

12 Page





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