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PDF MB85R4002A Data sheet ( Hoja de datos )
| Número de pieza | MB85R4002A | |
| Descripción | Memory FRAM | |
| Fabricantes | Fujitsu | |
| Logotipo |  |
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FUJITSU SEMICONDUCTOR
DATA SHEET
Memory FRAM
4 M Bit (256 K × 16)
MB85R4002A
DS501-00006-3v1-E
■ DESCRIPTIONS
The MB85R4002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words ×
16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process
technologies.
The MB85R4002A is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85R4002A can be used for 1010 read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E2PROM.
The MB85R4002A uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.
■ FEATURES
• Bit configuration
: 262,144 words × 16 bits
• LB and UB data byte control
• Read/write endurance
: 1010 times / byte
• Data retention
: 10 years ( + 55 °C), 55 years ( + 35 °C)
• Operating power supply voltage
: 3.0 V to 3.6 V
• Low power operation
: Operating power supply current 15 mA (Typ)
Standby current 50 μA (Typ)
• Operation ambient temperature range : − 40 °C to + 85 °C
• Package
: 48-pin plastic TSOP (FPT-48P-M48)
RoHS compliant
Copyright©2011-2013 FUJITSU SEMICONDUCTOR LIMITED All rights reserved
2013.4
1 page  
MB85R4002A
■ ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Rating
Min Max
Unit
Power Supply Voltage*
VDD −0.5
+4.0 V
Input Pin Voltage*
VIN
−0.5
VDD + 0.5 ( ≤ 4.0)
V
Output Pin Voltage*
VOUT
−0.5
VDD + 0.5 ( ≤ 4.0)
V
Operation Ambient Temperature
TA −40
+85 oC
Storage Temperature
TSTG
−55
+125
oC
* : All voltages are referenced to VSS (ground 0 V).
WARNING: Semiconductor devices may be permanently damaged by application of stress (including, without
limitation, voltage, current or temperature) in excess of absolute maximum ratings.
Do not exceed any of these ratings.
■ RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Value
Typ
Max
Unit
Power Supply Voltage* VDD 3.0 3.3 3.6 V
High Level Input Voltage*
VIH VDD × 0.8
⎯
VDD + 0.5
( ≤ 4.0)
V
Low Level Input Voltage*
VIL −0.5
⎯
+0.6
V
Operation Ambient Temperature
TA
− 40
⎯
+85 oC
* : All voltages are referenced to VSS (ground 0 V).
WARNING: The recommended operating conditions are required in order to ensure the normal operation of
the semiconductor device. All of the device's electrical characteristics are warranted when the
device is operated under these conditions.
Any use of semiconductor devices will be under their recommended operating condition.
Operation under any conditions other than these conditions may adversely affect reliability of
device and could result in device failure.
No warranty is made with respect to any use, operating conditions or combinations not represented
on this data sheet. If you are considering application under any conditions other than listed herein,
please contact sales representatives beforehand.
DS501-00006-3v1-E
5
5 Page 
5. Write Cycle Timing (CE2 Control)
MB85R4002A
CE1
CE2
LB, UB
A0 to A17
WE
Data In
tWC
tCA2
tBS tBP
tAS
Valid
tAH
tWS
tDS tDH
Valid
H or L
tWP
H or L
:H or L
6. Write Cycle Timing (WE Control)
CE1
CE2
LB, UB
A0 to A17
WE
Data In
tBS tBP
tAS
Valid
tAH
H or L
tWC
tWP
tDS
tDH
Valid
H or L
:H or L
tPC
Hi-Z
tPC
Hi-Z
DS501-00006-3v1-E
11
11 Page | ||
| Páginas | Total 28 Páginas | |
| PDF Descargar | [ Datasheet MB85R4002A.PDF ] | |
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