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Teilenummer | KTB2955 |
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Beschreibung | Silicon PNP Power Transistors | |
Hersteller | Inchange Semiconductor | |
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Gesamt 2 Seiten INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
KTB2955
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
·Complement to Type KTD3055
APPLICATIONS
·High power amplifier applications
·Recommended for 30~35W audio frequency amplifier output
stage application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-10 A
IB Base Current
PC
Collector Power Dissipation
@TC=25℃
TJ Junction Temperature
-1 A
40 W
150 ℃
Tstg Storage Temperature
-55~150 ℃
isc website: www.iscsemi.com
1 isc & iscsemi is registered trademark
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ KTB2955 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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