|
|
PDF MJD112 Data sheet ( Hoja de datos )
| Número de pieza | MJD112 | |
| Descripción | Silicon NPN epitaxial planer Transistors | |
| Fabricantes | MCC | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MJD112 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
|
No Preview Available !
MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
!"#
$
% !"#
MJD112
Features
• Lead Free Finish/RoHS Compliant("P" Suffix designates
RoHS Compliant. See ordering information)
• Case Material:Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
• High DC Current Gain
• Built-in a damper diode at E-C
• Maximum Thermal Resistance: 125oC/W Junction to Ambient
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
VCEO
VCBO
VEBO
IC
PC
TJ
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Dissipation
Operating Junction Temperature
Rating
100
100
5
2
1.0
150
TSTG
Storage Temperature
-55 to +150
Unit
V
V
V
A
W
к
к
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
Parameter
Collector-Emitter Breakdown Voltage
(IC=30mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=1mAdc, IE=0)
Collector-Emitter Breakdown Voltage
(IE=5mAdc, IC=0)
Collector Cutoff Current
(VCB=100Vdc, IE=0)
Collector emitter cutoff Current
(VCE=50Vdc, IE=0)
Emitter Cutoff Current
(VEB=5Vdc, IC=0)
DC Current Gain
(IC=500mAdc, VCE=3Vdc)
(IC=2Adc, VCE=3Vdc)
(IC=4Adc, VCE=3Vdc)
Collector-Emitter Saturation Voltage
(IC=2Adc, IB=8mAdc)
(IC=4Adc, IB=40mAdc)
Min Typ Max Units
100 ---
--- Vdc
100 ---
--- Vdc
5 --- --- Vdc
--- --- 20 nAdc
--- --- 20 nAdc
--- ---
2 mAdc
500
1000
200
---
---
--- ---
--- 12000
--- ---
--- 2 Vdc
--- 3 Vdc
fT
VBE
Cob
Transition frequency
(VCE=10Vdc, f=1MHz, IC=0.75A)
Base-Emitter Saturation Voltage
(IC=2Adc, VCE=3Vdc )
Output Capacitance
(VCB=10Vdc, f=0.1MHz, IE=0)
25 --- --- MHz
--- --- 2.8 Vdc
--- --- 100 pF
Silicon
NPN epitaxial planer
Transistors
DPACK
G
D
S
A
1
2
3
V
BF
C
JK
E
PIN 1. BASE
PIN 2. COLLECTOR
PIN 3. EMITTER
DIMENSIONS
INCHES
DIM MIN
MAX
A
0.235
0.245
B
0.205
0.215
C
0.086
0.094
D
0.025
0.035
E
0.035
0.045
F
0.250
0.265
G 0.090
J
0.018
0.023
K 0.020
---
S
0.370
0.410
V
0.035
0.050
MM
MIN MAX
5.97
6.22
5.21 5.46
2.19 2.38
0.64 0.89
0.99 1.14
6.35 6.73
2.28
0.48 0.58
0.51 ---
9.40
10.42
0.88 1.27
NOTE
Revision: 2
www.mccsemi.com
1 of 3
2010/11/03
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MJD112.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MJD112 | Silicon NPN transistor |  BLUE ROCKET ELECTRONICS |
| MJD112 | Silicon NPN epitaxial planer Transistors | MCC |
| MJD112 | Silicon NPN Power Transistor |  Inchange Semiconductor |
| MJD112 | NPN Silicon Darlington Transistor |  Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |