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Teilenummer | IRFP250N |
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Beschreibung | N-Channel MOSFET Transistor | |
Hersteller | Inchange Semiconductor | |
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Gesamt 2 Seiten INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP250N
FEATURES
·Drain Current ID= 30A@ TC=25℃
·Drain Source Voltage-
: VDSS= 200V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.075Ω(Max)
·Fast Switching
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
ID Drain Current-Continuous
IDM Drain Current-Single Pluse
PD Total Dissipation @TC=25℃
TJ Max. Operating Junction Temperature
Tstg Storage Temperature
VALUE UNIT
200 V
±20
V
30 A
120 A
214 W
150 ℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
Rth j-a Thermal Resistance, Junction to Ambient
MAX
0.7
40
UNIT
℃/W
℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ IRFP250N Schematic.PDF ] |
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