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KLI-8023 Schematic ( PDF Datasheet ) - ON Semiconductor

Teilenummer KLI-8023
Beschreibung Linear CCD Image Sensor
Hersteller ON Semiconductor
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Gesamt 25 Seiten
KLI-8023 Datasheet, Funktion
KLI-8023
Linear CCD Image Sensor
Description
The KLI−8023 Image Sensor is a multispectral, linear solid state
image sensor for color scanning applications where ultra-high
resolution is required.
The imager consists of three parallel linear photodiode arrays, each
with 8,000 active photosites for the output of red, green, and blue
(R, G, B) signals. This device offers high sensitivity, high data rates,
low noise and negligible lag. Individual electronic exposure control
for each color allows the KLI−8023 sensor to be used under a variety
of illumination conditions. The imager can be operated in an Extended
Dynamic Range mode for the most demanding applications.
Table 1. GENERAL SPECIFICATIONS
Parameter
Typical Value
Architecture
3 Channel, RGB Trilinear CCD
Pixel Count
8002 × 3
Pixel Size
9 mm (H) × 9 mm (V)
Pixel Pitch
9 mm
Inter-Array Spacing
108 mm (12 Lines Effective)
Imager Size
Saturation Signal
72.0 mm (H) × 0.225 mm (V)
185 ke(Normal DR Mode)
400 ke(Extended DR Mode)
Dynamic Range
(2 MHz Data Rate)
84 dB (Normal DR Mode)
90 dB (Extended DR Mode)
Responsivity
R, G, B (−RAA)
R, G, B (−DAA)
Mono (−AAA, −SAA, −MAA)
Output Sensitivity
32, 20, 20 V/mJ/cm2
29, 19, 18 V/mJ/cm2
33 V/mJ/cm2
14.4 mV/e
Dark Current
0.002 pA/Pixel
Dark Current Doubling Rate
8°C
Charge Transfer Efficiency
0.999998/Transfer
Photoresponse Non-Uniformity
3% Peak-Peak
Lag (First Field)
0.025%
Maximum Data Rate
6 MHz/Channel
Package
CERDIP (Sidebrazed, CuW)
Cover Glass
AR Coated, 2 Sides
NOTE: Parameters above are specified at T = 25°C (junction temperature) and
1 MHz clock rates unless otherwise noted.
www.onsemi.com
Figure 1. KLI−8023 Linear CCD
Image Sensor
Features
12 Line Spacing between Color Channels
Single Shift Register per Channel
High Off-Band Spectral Rejection
Dark Reference Pixels Provided
Anti-Reflective Glass
Wide Dynamic Range, Low Noise
Dual Dynamic Range Mode Operation
No Image Lag
Electronic Exposure Control
High Charge Transfer Efficiency
Two-Phase Register Clocking
74 ACT Logic Compatible Clocks
6 MHz Maximum Data Rate
Applications
Digitization
Medical Imaging
Photography
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
November, 2015 − Rev. 2
1
Publication Order Number:
KLI−8023/D






KLI-8023 Datasheet, Funktion
KLI−8023
Noise
Noise is defined as any unwanted signal added to the
imager output. Temporal noise sources present in a typical
imager include the dark current, photon shot noise, reset
transistor noise, CCD clocking noise, and the output
amplifier noise. Dark current is dependent on the imager
operating temperature and can be reduced by cooling the
imager. The reset transistor noise can be removed using
correlated double sampling signal processing. The photon
shot noise cannot be eliminated; however, by acquiring and
averaging several frames it, and all temporal noise sources,
can be reduced. Another source of noise is the variation in
dark current from pixel to pixel leads to a dark noise pattern
across an imager. The effects of this dark pattern noise can
also be minimized by averaging several frames and then
using the pixel-referenced, dark frame data as the zero
reference level for each pixel.
Noise Evaluation
The noise evaluation measures the noise levels associated
with operating the imager at the specified clocking speeds
and temperatures. The test is performed with imager
temperature held stable and all incident light removed.
The noise contributions of the evaluation circuitry also need
to be removed from the calculation. Once this is done, the
total imager noise will be approximately equal to the sum of
squares of each of the CCD clocking noise, output amplifier
noise, and the dark current noise.
Photodiode Quantum Efficiency
For a given area, absolute quantum efficiency is defined
as the ratio of the number of photogenerated electrons
captured during an integration period to the number of
impinging photons during that period. Higher values
indicate a more efficient photon conversion process and
hence are more desirable.
Absolute photodiode quantum efficiency is calculated
from the charge-to-voltage, imager responsivity, and
measured active photodiode area. It is calculated over the
entire wavelength range of operation and graphed on a curve
as percent Quantum Efficiency versus Wavelength.
Once the charge-to-voltage, responsivity, and active
photodiode dimensions have all been measured, the absolute
quantum efficiency can be calculated as:
Quantum Efficiency (l) + Responsivity (l) B
B Charge to Voltage B
B Active Photodiode Area
Energy per Photon (l)
where
Energy per Photon (l) + h @ c
l
and
h @ c + 1.98647E * 25 [J * m]
Care should be taken to ensure that all quantities are
represented in similar units before any calculations are
performed. Using the above formulas, the absolute quantum
efficiency can be expressed as:
dV h @ c
QE(l) + 100% @ R(l) B dNe B AreaDiode @ l
Photoresponse Non-Uniformity (PRNU)
The PRNU measurement is taken in a flat field of
collimated white light. The intensity of the light is set to
a value approximately 10% to 20% below the saturated
signal level. One region (or “window”) of pixels is observed
for uniformity at a given time, and the average response is
calculated for each non-overlapping windowed section. In
the case of medium or low frequency PRNU measurements,
a medium filter of 3−7 pixels is applied to this region to
eliminate the effects of single point defects. The maximum
and minimum pixel is determined for each windowed
section. Again, for each section, the following formula is
applied:
ǒ ǓMax_Pixel_Value * Min_Pixel_Value
PRNU + 100% @
Mean_Pixel_Value
Each section is then compared against the specification to
identify the region with the largest percent deviation from
the average response for the imager.
Resolution
The resolution of a solid-state image sensor is the spatial
resolving power of that sensor. The spatial resolution
of a sensor is descried in the spatial frequency domain by the
modulation transfer function (MTF). The discrete sampling
nature of solid-state image sensors gives rise to
a sampling frequency that will determine the upper limit of
the sensor’s frequency response. Resolution is
frequently described in terms of the number of dots or
photosites per inch (DPI) in the imager or object planes.
For example, a linear image sensor with a single array of
1,000 photosites of pitch 10 mm would have a resolution of
2,540 DPI (1,000 / (1,000 0.01 mm 1/25.4 mm)). If the
sensor were used in an optical system to image an 8wide
document, then the resolution in the document plane would
be 125 DPI (1,000 pixels / 8). This example is slightly
misleading in that it does not consider the frequency
response of the sensor or the optics. In reality, the sensor will
have an MTF of between 0.2 and 0.7 at the Nyquist spatial
frequency and the optics are likely to have an
MTF of 0.6 to 0.9 at the Nyquist frequency. It is important
to note that even though a sensor may have a high
enough sampling frequency for a particular application, the
overall frequency response of the sensor and optics may not
be sufficient for that application!
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KLI-8023 pdf, datenblatt
TYPICAL PERFORMANCE CURVES
Defective Pixel Classification
Note 13: Bright
Field Bright Pixel
Note 12: Dark
Field Bright
Pixel
KLI−8023
Average
Pixel
Note 14: Bright Field
Exposure Control
Bright Defect
Note 13: Bright
Field Dark Pixel
Average
Pixel
Note 14: Bright
Field Exposure
Control Dark
Defect
Exposure
Figure 4. Illustration of Defect Classifications
Exposure
35
30
25
20
15
10
5
0
350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100
Wavelength (nm)
Figure 5. KLI−8023 Typical Responsivity
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