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Teilenummer | G4PF50WD |
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Beschreibung | IRG4PF50WD | |
Hersteller | International Rectifier | |
Logo | ||
Gesamt 10 Seiten PD- 91788
IRG4PF50WD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Optimized for use in Welding and Switch-Mode
Power Supply applications
• Industry benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
G
• Low IGBT conduction losses
• Latest technology IGBT design offers tighter
parameter distribution coupled with
exceptional reliability
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-247AC package
Benefits
• Lower switching losses allow more cost-effective
operation and hence efficient replacement of larger-die
MOSFETs up to 100kHz
• HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
Absolute Maximum Ratings
C
E
n-channel
VCES = 900V
VCE(on) typ. = 2.25V
@VGE = 15V, IC = 28A
TO-247AC
Parameter
VCES
Collector-to-Emitter Breakdown Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C
ICM
ILM
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
IF @ TC = 100°C Diode Continuous Forward Current
IFM Diode Maximum Forward Current
VGE Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C
TJ
TSTG
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
Max.
900
51
28
204
204
16
204
± 20
200
78
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Units
V
A
V
W
°C
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.64
0.83
–––
40
–––
Units
°C/W
g (oz)
1
IRG4PF50WD
16 RG = 5.0Ω
T J = 150° C
VCC = 720V
VGE = 15V
12
8
4
0
10 20 30 40 50 60
I C , Collector Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
1000
VGE = 20V
T J = 125 oC
100
10
SAFE OPERATING AREA
1
1 10 100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
T J= 150°C
10
T J= 125°C
T J= 25°C
1
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Forward Voltage Drop - V FM (V)
Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current
6 www.irf.com
6 Page | ||
Seiten | Gesamt 10 Seiten | |
PDF Download | [ G4PF50WD Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
G4PF50W | IRG4PF50W | International Rectifier |
G4PF50WD | IRG4PF50WD | International Rectifier |
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