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ADM207E Schematic ( PDF Datasheet ) - Analog Devices

Teilenummer ADM207E
Beschreibung RS-232 Line Drivers/Receivers
Hersteller Analog Devices
Logo Analog Devices Logo 




Gesamt 20 Seiten
ADM207E Datasheet, Funktion
EMI/EMC-Compliant, ±15 kV ESD­Protected,
RS-232 Line Drivers/Receivers
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
FEATURES
Complies with 89/336/EEC EMC directive
ESD protection to IEC 1000-4-2 (801-2)
Contact discharge: ±8 kV
Air-gap discharge: ±15 kV
Human body model: ±15 kV
EFT/burst immunity (IEC 1000-4-4)
Low EMI emissions (EN 55022)
Eliminates need for TransZorb® suppressors
230 kbps data rate guaranteed
Single 5 V power supply
Shutdown mode 1 μW
Plug-in upgrade for MAX2xxE
Space saving TSSOP package available
APPLICATIONS
Laptop computers
Notebook computers
Printers
Peripherals
Modems
GENERAL DESCRIPTION
The ADM2xxE is a family of robust RS-232 and V.28 interface
devices that operate from a single 5 V power supply. These pro-
ducts are suitable for operation in harsh electrical environments
and are compliant with the EU directive on electromagnetic
compatibility (EMC) (89/336/EEC). The level of emissions and
immunity are both in compliance. EM immunity includes ESD
protection in excess of ±15 kV on all I/O lines (IEC 1000-4-2),
fast transient burst protection (IEC 1000­4­4), and radiated
immunity (IEC 1000-4-3). EM emissions include radiated and
conducted emissions as required by Information Technology
Equipment EN 55022, CISPR 22.
All devices fully conform to the EIA-232-E and CCITT V.28
specifications and operate at data rates up to 230 kbps. Shut-
down and enable control pins are provided on some of the
products (see Table 1).
The shutdown function on the ADM211E disables the charge
pump and all transmitters and receivers. On the ADM213E the
CONNECTION DIAGRAM
5V INPUT
0.1µF+
10V
0.1µF+
10V
12 C1+
14 C1–
+5V TO +10V
VOLTAGE
DOUBLER
VCC 11
V+ 13
15 C2+ +10V TO –10V
VOLTAGE
16 C2– INVERTER
V– 17
+
0.1µF
6.3V
+
0.1µF
0.1µF
+ 10V
T1IN
TTL/CMOS
INPUTS1
T2IN
T3IN
T4IN
R1OUT
R2OUT
TTL/CMOS
OUTPUTS
R3OUT
R4OUT
R5OUT
EN (ADM211E)
EN (ADM213E)
7
6
20
21
8
5
26
22
19
24
T1 2
T2 3
T3 1
T4 28
R1 9
R2 4
R3 27
R4 23
R5 18
ADM211E/ 25
GND ADM213E
10
T1OUT
T2OUT
T3OUT
RS-232
OUTPUTS
T4OUT
R1IN
R2IN
R3IN
RS-232
INPUTS2
R4IN
R5IN
SHDN (ADM211E)
SHDN (ADM213E)
1 INTERNAL 400kPULL-UP RESISTOR ON EACH TTL/CMOS INPUT.
2 INTERNAL 5kPULL-DOWN RESISTOR ON EACH RS-232 INPUT.
Figure 1.
charge pump, all transmitters, and three of the five receivers are
disabled. The remaining two receivers remain active, thereby
allowing monitoring of peripheral devices. This feature allows
the device to be shut down until a peripheral device begins
communication. The active receivers can alert the processor,
which can then take the ADM213E out of the shutdown mode.
Operating from a single 5 V supply, four external 0.1 μF
capacitors are required.
The ADM207E and ADM208E are available in 24-lead PDIP, SSOP,
available in 28-lead SSOP, TSSOP, and SOIC_W packages. All
products are backward compatible with earlier ADM2xx products,
facilitating easy upgrading of older designs.
Table 1. Selection Table
Model
Supply Voltage
ADM206E 5 V
ADM207E 5 V
ADM208E 5 V
ADM211E 5 V
ADM213E 5 V
1 Two receivers active.
Drivers
4
5
4
4
4
Receivers
3
3
4
5
5
ESD Protection
±15 kV
±15 kV
±15 kV
±15 kV
±15 kV
Shutdown
Yes
No
No
Yes
Yes (SHDN)1
Enable
Yes
No
No
Yes
Yes (EN)
Packages
RW-24
N-24-1, RW-24, RS-24, RU-24
N-24-1, RW-24, RS-24, RU-24
RW-28, RS-28, RU-28
RW-28, RS-28, RU-28
Rev. E
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
©2006 Analog Devices, Inc. All rights reserved.






ADM207E Datasheet, Funktion
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
T2OUT 1
24 T3OUT
T1OUT 2
23 R3IN
R2IN 3
22 R3OUT
R2OUT 4
21 T4IN
T1IN
R1OUT
R1IN
5 ADM208E 20 T4OUT
6 TOP VIEW 19 T3IN
7 (Not to Scale) 18 T2IN
GND 8
17 R4OUT
VCC 9
16 R4IN
C1+ 10
15 V–
V+ 11
14 C2–
C1– 12
13 C2+
Figure 6. ADM208E Pin Configuration
0.1µF+
10V
0.1µF+
10V
5V INPUT
10 C1+
12 C1–
+5V TO +10V
VOLTAGE
DOUBLER
VCC 9
V+ 11
13 C2+ +10V TO –10V
VOLTAGE
14 C2– INVERTER
V– 15
0.1µF
+ 6.3V
0.1µF
+ 10V
+
0.1µF
T1IN
TTL/CMOS
INPUTS1
T2IN
T3IN
T4IN
R1OUT
TTL/CMOS
OUTPUTS
R2OUT
R3OUT
R4OUT
5
18
19
21
6
4
22
17
T1 2
T2 1
T3 24
T4 20
R1 7
R2 3
R3 23
R4 16
GND ADM208E
8
T1OUT
T2OUT
T3OUT
RS-232
OUTPUTS
T4OUT
R1IN
R2IN
R3IN
RS-232
INPUTS2
R4IN
1 INTERNAL 400kPULL-UP RESISTOR ON EACH TTL/CMOS INPUT.
2 INTERNAL 5kPULL-DOWN RESISTOR ON EACH RS-232 INPUT.
Figure 7. ADM208E Typical Operating Circuit
T3OUT 1
28 T4OUT
T1OUT 2
27 R3IN
T2OUT 3
26 R3OUT
R2IN 4
25 SHDN
R2OUT 5
24 EN
T2IN
T1IN
R1OUT
6 ADM211E 23 R4IN
7 TOP VIEW 22 R4OUT
8 (Not to Scale) 21 T4IN
R1IN 9
20 T3IN
GND 10
19 R5OUT
VCC 11
18 R5IN
C1+ 12
17 V–
V+ 13
16 C2–
C1– 14
15 C2+
Figure 8. ADM211E Pin Configuration
5V INPUT
0.1µF +
10V
0.1µF +
10V
12 C1+
14 C1–
+5V TO +10V
VOLTAGE
DOUBLER
VCC 11
V+ 13
15 C2+
16 C2–
+10V TO –10V
VOLTAGE
INVERTER
V– 17
+
0.1µF
6.3V
+
0.1µF
0.1µF
+ 10V
T1IN
TTL/CMOS
INPUTS1
T2IN
T3IN
T4IN
R1OUT
R2OUT
TTL/CMOS
OUTPUTS
R3OUT
R4OUT
R5OUT
EN
7
6
20
21
8
5
26
22
19
24
T1 2
T2 3
T3 1
T4 28
R1 9
R2 4
R3 27
R4 23
R5 18
GND
10
25
ADM211E
T1OUT
T2OUT
T3OUT
RS-232
OUTPUTS
T4OUT
R1IN
R2IN
R3IN
RS-232
INPUTS2
R4IN
R5IN
SHDN
1 INTERNAL 400kPULL-UP RESISTOR ON EACH TTL/CMOS INPUT.
2 INTERNAL 5kPULL-DOWN RESISTOR ON EACH RS-232 INPUT.
Figure 9. ADM211E Typical Operating Circuit
Rev. E | Page 6 of 20

6 Page









ADM207E pdf, datenblatt
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
destruction can occur immediately because of arcing or heating.
Even if catastrophic failure does not occur immediately, the
device can suffer from parametric degradation that can result in
degraded performance. The cumulative effects of continuous
exposure can eventually lead to complete failure.
I/O lines are particularly vulnerable to ESD damage. Simply
touching or plugging in an I/O cable can result in a static
discharge that can damage or destroy the interface product
connected to the I/O port. Traditional ESD test methods, such
as the MIL-STD-883B method 3015.7, do not fully test product
susceptibility to this type of discharge. This test was intended to
test product susceptibility to ESD damage during handling.
Each pin is tested with respect to all other pins.
There are some important differences between the traditional
test and the IEC test:
The IEC test is much more stringent in terms of discharge
energy. The peak current injected is over four times greater.
The current rise time is significantly faster in the IEC test.
The IEC test is carried out while power is applied to
the device.
It is possible that the ESD discharge could induce latch-up in
the device being tested. This test, therefore, is more represent-
tative of a real-world I/O discharge, where the equipment is
operating normally with power applied. However, both tests
should be performed to ensure maximum protection both
during handling and later during field service.
HIGH
VOLTAGE
GENERATOR
R1
C1
R2
DEVICE
UNDER TEST
ESD TEST METHOD
H. BODY MIL-STD-883B
IEC 1000-4-2
R2
1.5k
330
C1
100pF
150pF
Figure 26. ESD Test Standards
100
90
36.8
10
tRL tDL
TIME t
Figure 27. Human Body Model ESD Current Waveform
100
90
10
0.1ns TO 1ns
30ns
60ns
TIME t
Figure 28. IEC 1000-4-2 ESD Current Waveform
ADM2xxE products are tested using both of the previously
mentioned test methods. Pins are tested with respect to all other
pins as per the MIL-STD-883B specification. In addition, all I/O
pins are tested per the IEC test specification. The products are
tested under the following conditions:
Power on (normal operation).
Power on (shutdown mode).
Power off.
There are four levels of compliance defined by IEC 1000-4-2.
ADM2xxE products meet the most stringent compliance level
both for contact and for air-gap discharge. This means that the
products are able to withstand contact discharges in excess of
8 kV and air-gap discharges in excess of 15 kV.
Table 7. IEC 1000-4-2 Compliance Levels
Level Contact Discharge (kV) Air-Gap Discharge (kV)
12
2
24
4
36
8
48
15
Table 8. ADM2xxE ESD Test Results
ESD Test Method
I/O Pin (kV)
MIL-STD-883B
±15
IEC 1000-4-2
Contact
±8
Air-Gap
±15
EFT/BURST TESTING (IEC 1000-4-4)
IEC 1000-4-4 (previously IEC 801-4) covers EFT/burst
immunity. Electrical fast transients occur because of arcing
contacts in switches and relays. The tests simulate the
interference generated when, for example, a power relay
disconnects an inductive load. A spark is generated due to the
well-known back EMF effect. In fact, the spark consists of a
Rev. E | Page 12 of 20

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