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PDF MTB090N06J3 Data sheet ( Hoja de datos )
| Número de pieza | MTB090N06J3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB090N06J3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C420J3
Issued Date : 2016.09.07
Revised Date :
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTB090N06J3 BVDSS
ID@ TC=25°C, VGS=10V
RDS(ON)@VGS=10V, ID=3A
RDS(ON)@VGS=4V, ID=2.5A
60V
10A
74mΩ(typ)
91mΩ(typ)
Features
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package
Symbol
MTB090N06J3
Outline
TO-252(DPAK)
G：Gate
D：Drain
S：Source
G DS
Ordering Information
Device
MTB090N06J3-0-T3-G
Package
Shipping
TO-252
(Pb-free lead plating and halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB090N06J3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C420J3
Issued Date : 2016.09.07
Revised Date :
Page No. : 5/ 9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
NormalizedThreshold Voltage vs Junction Tempearture
1.4
Ciss
100
C oss
10
0
Crss
5 10 15 20 25
VDS, Drain-Source Voltage(V)
30
Forward Transfer Admittance vs Drain Current
10
1
0.1
0.01
0.001
100
VDS=10V
Pulsed
Ta=25°C
0.01 0.1
1
ID, Drain Current(A)
Maximum Safe Operating Area
10
RDS(ON)
10 Limited
10μs
100μs
1ms
1 10ms
TC=25°C, Tj=150°, VGS=10V
RθJC=6°C/W, Single Pulse
100ms
DC
0.1
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1000
1.2
ID=1mA
1
0.8
ID=250μA
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=30V
8 VDS=12V
6
VDS=48V
4
2
ID=3A
0
0 1 2 3 4 5 6 7 8 9 10
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
12
10
8
6
4
2 VGS=10V, RθJC=6°C/W
0
25 50 75 100 125 150
TC, Case Temperature(°C)
175
MTB090N06J3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB090N06J3.PDF ] | |
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