|
|
Teilenummer | MTB04N03H8 |
|
Beschreibung | N-Channel Enhancement Mode Power MOSFET | |
Hersteller | CYStech Electronics | |
Logo | ||
Gesamt 11 Seiten CYStech Electronics Corp.
Spec. No. : C789H8
Issued Date : 2010.09.23
Revised Date : 2012.11.12
Page No. : 1/11
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB04N03H8 BVDSS
ID
RDS(ON)@VGS=10V, ID=30A
RDS(ON)@VGS=4.5V, ID=25A
30V
75A
3.2 mΩ(typ)
4.9 mΩ(typ)
Description
The MTB04N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• Pb-free lead plating and Halogen-free package
Symbol
MTB04N03H8
Outline
Pin 1
DFN5×6
G:Gate
D:Drain
S:Source
MTB04N03H8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C789H8
Issued Date : 2010.09.23
Revised Date : 2012.11.12
Page No. : 6/11
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
Threshold Voltage vs Junction Tempearture
1.4
ID=250μA
1.2
1000
1
C oss 0.8
Crss
100
0.1
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
10
1
VDS=10V
0.1 Pulsed
Ta=25°C
0.01
0.001
0.01 0.1
1
10
ID, Drain Current(A)
100
Maximum Safe Operating Area
1000
100
RDS(ON) Limit
10
TC=25°C, Tj=150°C,
1 VGS=10V, RθJC=25°C/W
Single Pulse
100μs
1ms
10ms
100ms
1s
DC
0.1
0.01
0.1 1
10
VDS, Drain-Source Voltage(V)
100
0.6
0.4
-60
-20 20
60 100
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=15V
8
VDS=10V
6 VDS=5V
140
4
2 VDS=15V
ID=30A
0
0 10 20 30 40
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
90
80
70
60
50
40
30
20
10 VGS=10V, RθJC=2.5°C/W
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
MTB04N03H8
CYStek Product Specification
6 Page | ||
Seiten | Gesamt 11 Seiten | |
PDF Download | [ MTB04N03H8 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
MTB04N03H8 | N-Channel Enhancement Mode Power MOSFET | CYStech Electronics |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |