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MTB04N03H8 Schematic ( PDF Datasheet ) - CYStech Electronics

Teilenummer MTB04N03H8
Beschreibung N-Channel Enhancement Mode Power MOSFET
Hersteller CYStech Electronics
Logo CYStech Electronics Logo 




Gesamt 11 Seiten
MTB04N03H8 Datasheet, Funktion
CYStech Electronics Corp.
Spec. No. : C789H8
Issued Date : 2010.09.23
Revised Date : 2012.11.12
Page No. : 1/11
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB04N03H8 BVDSS
ID
RDS(ON)@VGS=10V, ID=30A
RDS(ON)@VGS=4.5V, ID=25A
30V
75A
3.2 mΩ(typ)
4.9 mΩ(typ)
Description
The MTB04N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Dynamic dv/dt rating
Repetitive Avalanche Rated
Pb-free lead plating and Halogen-free package
Symbol
MTB04N03H8
Outline
Pin 1
DFN5×6
GGate
DDrain
SSource
MTB04N03H8
CYStek Product Specification






MTB04N03H8 Datasheet, Funktion
CYStech Electronics Corp.
Spec. No. : C789H8
Issued Date : 2010.09.23
Revised Date : 2012.11.12
Page No. : 6/11
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
Threshold Voltage vs Junction Tempearture
1.4
ID=250μA
1.2
1000
1
C oss 0.8
Crss
100
0.1
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
10
1
VDS=10V
0.1 Pulsed
Ta=25°C
0.01
0.001
0.01 0.1
1
10
ID, Drain Current(A)
100
Maximum Safe Operating Area
1000
100
RDS(ON) Limit
10
TC=25°C, Tj=150°C,
1 VGS=10V, RθJC=25°C/W
Single Pulse
100μs
1ms
10ms
100ms
1s
DC
0.1
0.01
0.1 1
10
VDS, Drain-Source Voltage(V)
100
0.6
0.4
-60
-20 20
60 100
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=15V
8
VDS=10V
6 VDS=5V
140
4
2 VDS=15V
ID=30A
0
0 10 20 30 40
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
90
80
70
60
50
40
30
20
10 VGS=10V, RθJC=2.5°C/W
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
MTB04N03H8
CYStek Product Specification

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