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PDF MTB04N03F3 Data sheet ( Hoja de datos )
| Número de pieza | MTB04N03F3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB04N03F3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C807F3
Issued Date : 2009.12.02
Revised Date : 2015.09.04
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTB04N03F3 BVDSS
ID@VGS=10V, TC=25°C
RDSON(TYP)
VGS=10V, ID=30A
VGS=4.5V, ID=24A
Features
• Low On-resistance
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package
30V
115A
3.4mΩ
4.3mΩ
Symbol
MTB04N03F3
Outline
TO-263
G：Gate
D：Drain
S：Source
G DS
Ordering Information
Device
Package
Shipping
MTB04N03F3-0-T7-X
TO-263
(Pb-free lead plating and RoHS compliant package)
800 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB04N03F3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C807F3
Issued Date : 2009.12.02
Revised Date : 2015.09.04
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
Ciss
C oss
1.2
1
0.8
ID=1mA
Crss
100
0.1
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
10
1
VDS=5V
0.1 Pulsed
Ta=25°C
0.01
0.001
0.01 0.1
1
10
ID, Drain Current(A)
100
Maximum Safe Operating Area
1000
100 RDS(ON) Limit
10
1 TC=25°C, Tj=175°C,
VGS=10V,RθJC=1.4°C/W,
single pulse
0.1
0.01
0.1 1
10
VDS, Drain-Source Voltage(V)
10μs
100μs
1ms
10ms
100ms
DC
100
0.6
ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=15V
8 ID=30A
6
4
2
0
0 10 20 30 40 50 60
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
140
120 Silicon Limit
100
80
60
40 Package Limit
20 VGS=10V, RθJC=1.4°C/W
0
25 50 75 100 125 150
TC, Case Temperature(°C)
175
MTB04N03F3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB04N03F3.PDF ] | |
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