|
|
Teilenummer | MTB030N10RE3 |
|
Beschreibung | N-Channel Enhancement Mode Power MOSFET | |
Hersteller | CYStech Electronics | |
Logo | ||
Gesamt 8 Seiten CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB030N10RE3
Spec. No. : C053E3
Issued Date : 2016.08.26
Revised Date :
Page No. : 1/ 8
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=20A
RDS(ON)@VGS=4.5V, ID=15A
100V
29A
5.5A
26.4 mΩ(typ)
30.8 mΩ(typ)
Symbol
MTB030N10RE3
Outline
TO-220
G:Gate D:Drain S:Source
GDS
Ordering Information
Device
Package
Shipping
MTB030N10RE3-0-UB-X
TO-220
(Pb-free lead plating package)
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB030N10RE3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C053E3
Issued Date : 2016.08.26
Revised Date :
Page No. : 6/ 8
Typical Characteristics(Cont.)
Typical Transfer Characteristics
50
45 VDS=10V
40
35
30
25
20
15
10
5
0
01234 5678
VGS, Gate-Source Voltage(V)
9 10
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0.0001
Transient Thermal Response Curves
1
Single Pulse Maximum Power Dissipation
TJ(MAX)=175°C
TC=25°C
RθJC=2.5°C/W
0.001 0.01
0.1
1
10
Pulse Width(s)
D=0.5
0.2
0.1
0.1 0.05
0.02
0.01
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=2.5°C/W
0.01
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
t1, Square Wave Pulse Duration(s)
1.E+00
1.E+01
MTB030N10RE3
CYStek Product Specification
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ MTB030N10RE3 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
MTB030N10RE3 | N-Channel Enhancement Mode Power MOSFET | CYStech Electronics |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |