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PDF CJ3439KDW Data sheet ( Hoja de datos )
| Número de pieza | CJ3439KDW | |
| Descripción | MOSFETS | |
| Fabricantes | JCST | |
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Hay una vista previa y un enlace de descarga de CJ3439KDW (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate MOSFETS
CJ3439KDW N channel+P Channel MOSFET
V(BR)DSS
20 V
-20V
RDS(on)MAX
380mΩ@ 4.5V
450mΩ@ 2.5V
800mΩ@1.8V
520mΩ@-4.5V
700mΩ@-2.5V
950mΩ@-1.8V
ID
0.75A
SOT-363
-0.66A
FEATURE
z Surface Mount Package
z Low RDS(on)
z Operated at Low Logic Level Gate Drive
z ESD Protected Gate
z Including a N-ch CJ3134K and a P-ch CJ3139K
(independently) In a Package
APPLICATION
z Load/ Power Switching
z Interfacing Switching
z Battery Management for Ultra Small Portable Electronics
z Logic Level Shift
MARKING
Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Symbol
N-MOSFET
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (note 1)
ID
Pulsed Drain Current (tp=10us)
IDM
P-MOSFET
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (note 1)
ID
Pulsed Drain Current (tp=10us)
IDM
Temperature and Thermal Resistance
Thermal Resistance from Junction to Ambient (note 1)
RθJA
Junction Temperature
TJ
Storage Temperature
TSTG
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
TL
www.cj-elec.com
1
Value
20
±12
0.75
1.8
-20
±12
-0.66
-1.2
833
150
-55~+150
260
Unit
V
V
A
A
V
V
A
A
℃/W
℃
℃
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A,Oct,2014
5 Page | ||
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| PDF Descargar | [ Datasheet CJ3439KDW.PDF ] | |
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