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Teilenummer | CJ3139KW |
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Beschreibung | MOSFETS | |
Hersteller | JCST | |
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Gesamt 5 Seiten JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate MOSFETS
CJ3139KW P-Channel Power MOSFET
V(BR)DSS
9
RDS(on)MAX
Pȍ#9
Pȍ#9
95 Pȍ(TYP)# 189
ID
$
GENERRAL DESCRIPTION
This Single P-Channel MOSFET has been designed using advanced
Power Trench process to optimize the RDS(ON).
SOT-323
1. GATE
2. SOURCE
3. DRAIN
FEATURE
z High-Side Switching
z Low On-Resistance
z Low Threshold
z Fast Switching Speed
MARKING
APPLICATION
z Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories
z Battery Operated Systems
z Power Supply Converter Circuits
z Load/Power Switching Cell Phones, Pagers
Equivalent Circuit
D
G
S
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source voltage
Typical Gate-Source Voltage
Drain Current-Continuous
Drain Current -Pulsed(note1)
Power Dissipation (note 2)
Thermal Resistance from Junction to Ambient
Storage Temperature
Junction Temperature
Symbol
VDSS
VGS
ID
IDM
PD
RθJA
Tj
Tstg
Value
-20
±12
-0.66
-2.64
200
625
150
-55 ~+150
Unit
V
A
mW
℃/W
℃
www.cj-elec.com
1
C,Jun,2015
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ CJ3139KW Schematic.PDF ] |
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