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PDF CJ2333 Data sheet ( Hoja de datos )
| Número de pieza | CJ2333 | |
| Descripción | P-Channel MOSFET | |
| Fabricantes | JCST | |
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Hay una vista previa y un enlace de descarga de CJ2333 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ2333 P-Channel MOSFET
SOT-23
DESCRIPTION
The CJ2333 uses advanced trench technology and design to
provide excellent RDS(on) with low gate charge.This device is suitable
for use in PWM,load switching and general purpose applications.
1. GATE
2. SOURCE
3. DRAIN
FEATURE
TrenchFET Power MOSFET
APPLICATION
DC/DC Converter
Load Switch for Portable Devices
Battery Switch
MARKING: S33
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (t=300µs)
Power Dissipation
Thermal Resistance from Junction to Ambient
VDS
VGS
ID
IDM
PD
RθJA
-12
±8
-6 a
-20
0.35 b
1.1a
357 b
113 a
Junction Temperature
Storage Temperature
TJ
TSTG
150
-55~ +150
a. Device mounted on FR-4 substrate board, with minimum recommended pad layout, single side.
b. Device mounted on no heat sink.
Unit
V
V
A
A
W
W
℃/W
℃/W
℃
℃
A-2,Dec,2012
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet CJ2333.PDF ] | |
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