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Teilenummer | CJ3400A |
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Beschreibung | N-Channel Enhancement Mode Field Effect Transistor | |
Hersteller | ZPSEMI | |
Logo | ||
Gesamt 3 Seiten CJ3400A
SOT-23 Plastic-Encapsulate MOSFETS
CJ3400A N-Channel Enhancement Mode Field Effect Transistor
FEATURE
z High dense cell design for extremely low RDS(ON)
z Exceptional on-resistance and maximum DC current capability
MARKING: R0A
SOT-23
1. GATE
2. SOURCE
3. DRAIN
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Drain Current-Pulsed (note 1)
Power Dissipation
Thermal Resistance from Junction to Ambient (note 2)
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
RθJA
TJ
TSTG
Value
30
±12
5.8
30
400
313
150
-55~+150
Unit
V
V
A
A
mW
℃/W
℃
℃
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Seiten | Gesamt 3 Seiten | |
PDF Download | [ CJ3400A Schematic.PDF ] |
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