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Teilenummer | NJD2873 |
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Beschreibung | Silicon NPN Power Transistor | |
Hersteller | Inchange Semiconductor | |
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Gesamt 2 Seiten isc Silicon NPN Power Transistor
INCHANGE Semiconductor
NJD2873
DESCRIPTION
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.3V(Max)( IC= 1A; IB= 50mA)
·DC Current Gain -hFE = 120(Min)@ IC= 0.5A
·High Current-Gain—Bandwidth Product
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high-gain audio amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
50 V
VCEO Collector-Emitter Voltage
50 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
ICM Collector Current-Peak
IB Base Current
Total Power Dissipation
PC
@ TC=25℃
Collector Power Dissipation
Ta=25℃
TJ Junction Temperature
2A
3A
0.4 A
15
W
1.68
150 ℃
Tstg Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
Rth j-c Thermal Resistance, Junction to Case
10
Rth j-a
Thermal
Ambient
Resistance,Junction
to
89.3
℃
℃/W
℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ NJD2873 Schematic.PDF ] |
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