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Teilenummer | D1047 |
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Beschreibung | High power NPN epitaxial planar bipolar transistor | |
Hersteller | STMicroelectronics | |
Logo | ||
Gesamt 10 Seiten 2SD1047
High power NPN epitaxial planar bipolar transistor
Features
■ High breakdown voltage VCEO = 140 V
■ Typical ft = 20 MHz
■ Fully characterized at 125 oC
Application
■ Power supply
Description
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
3
2
1
TO-3P
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2SD1047
April 2011
Marking
2SD1047
Package
TO-3P
Doc ID 018729 Rev 1
Packaging
Tube
1/10
www.st.com
10
Electrical characteristics
Table 5. TO-3P mechanical data
Dim.
A
A1
A2
b
b1
b2
c
D
D1
E
E1
E2
e
L
L1
L2
P
Q
Q1
Min.
4.6
1.45
1.20
0.80
1.80
2.80
0.55
19.70
15.40
5.15
19.50
18.20
3.10
mm
Typ.
1.50
1.40
1
0.60
19.90
13.90
13.60
9.60
5.45
20
3.50
18.40
5
3.80
2SD1047
Max.
5
1.65
1.60
1.20
2.20
3.20
0.75
20.10
15.80
5.75
20.50
18.60
3.30
6/10 Doc ID 018729 Rev 1
6 Page | ||
Seiten | Gesamt 10 Seiten | |
PDF Download | [ D1047 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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