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Número de pieza | AM50N10-18D | |
Descripción | N-Channel MOSFET | |
Fabricantes | Analog Power | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AM50N10-18D (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Analog Power
N-Channel 100-V (D-S) MOSFET
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
AM50N10-18D
VDS (V)
100
PRODUCT SUMMARY
rDS(on) (mΩ)
18 @ VGS = 10V
24 @ VGS = 5.5V
ID(A)
43
37
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 100
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TC=25°C
TC=25°C
VGS
ID
IDM
IS
PD
±20
43
160
55
50
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units
V
A
A
W
°C
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJA
RθJC
Maximum
40
3
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1 Publication Order Number:
DS_AM50N10-18D_1A
1 page Analog Power
Package Information
AM50N10-18D
Note:
1. All Dimension Are In mm.
2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall
Not Exceed 0.10 mm Per Side.
3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Gate
Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The Plastic Body.
© Preliminary
5 Publication Order Number:
DS_AM50N10-18D_1A
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet AM50N10-18D.PDF ] |
Número de pieza | Descripción | Fabricantes |
AM50N10-18D | N-Channel MOSFET | Analog Power |
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