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Teilenummer | GV3407 |
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Beschreibung | P-Channel Enhancement-Mode MOSFET | |
Hersteller | Gem micro | |
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Gesamt 4 Seiten Gem micro
semiconductor Inc.
GV3407
P-Channel Enhancement-Mode MOSFET (-30V, -4.3A)
PRODUCT SUMMARY
VDSS
ID
RDS(on) (m-ohm) Max
-30V -4.3A
60 @ VGS = -10 V,ID=-4.3A
78 @ VGS = -4.5V,ID=-3.0A
Features
Super high dense cell trench design for low RDS(on).
Rugged and reliable.
SOT-23-3L package
Ordering information:GV3407(Lead(Pb)-free)
GV3407-G(Lead(Pb)-free and halogen-free)
3 GV3407 Pin Assignment & Symbol
3-Lead Plastic SOT-23-3L
Pin 1: Gate 2: Source 3: Drain
Gate
1
2
Drain
Source
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
PD
Tj, Tstg
RJA
RJL
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current @TA=25oC1,6
Drain Current @TA=70oC1,6
Drain Current (Pulsed) 2
Total Power Dissipation @TA=25oC1
Total Power Dissipation @TA=70oC1
Operating Junction and Storage Temperature Range
Thermal Resistance Junction to Ambient (Steady-State)1
Thermal Resistance Junction to Ambient (t≤10S)1,6
Maximum Junction-to-Lead3
Ratings
-30
20
-4.3
-3.5
-20
1.4
0.9
-55 to +150
125
90
80
Units
V
V
A
A
W
C
C/W
C/W
DS-GV3407-REV03-BK16
Page 1 of 4
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ GV3407 Schematic.PDF ] |
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