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Teilenummer | SIC04A065ND |
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Beschreibung | SILICON CARBIDE SCHOTTKY DIODE | |
Hersteller | Pan Jit International | |
Logo | ||
Gesamt 5 Seiten SiC04A065ND
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
4A
Features
Temperature Independent Switching Behavior
Low Conduction and Switching Loss
High Surge Current Capability
Positive Temperature Coefficient on VF
Fast Reverse Recovery
Mechanical Data
Case: Molded plastic, TO-263
Marking: 04A065ND
Benefits
High Frequency Operation
Higher System Efficiency
Environmental Protection
Parallel Device Convenience
Hard Switching & High Reliability
High Temperature Application
TO-263
Unit: inch(mm)
Maximum Ratings
PARAMETER
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current
(TP=10mS, Half Sine Wave, D=0.1)
SYMBOL
VRRM
VRSM
VR
IF(AV)
IFRM
TEST CONDITIONS
TJ=25oC
TJ=25oC
TJ=25oC
TC=25oC
TC=125oC
TC=150oC
TC=25oC
TC=125oC
VALUE
650
650
650
11
6
4
26
23
UNITS
V
V
V
A
A
A
A
A
June 13,2016-REV.00
Page 1
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ SIC04A065ND Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
SIC04A065ND | SILICON CARBIDE SCHOTTKY DIODE | Pan Jit International |
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