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MBR30100C Schematic ( PDF Datasheet ) - BCD

Teilenummer MBR30100C
Beschreibung HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Hersteller BCD
Logo BCD Logo 




Gesamt 10 Seiten
MBR30100C Datasheet, Funktion
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR30100C
General Description
High voltage dual Schottky rectifier suited for switch
mode power supplies and other power converters.
This device is intended for use in medium voltage
operation, and particularly, in high frequency circuits
where low switching losses and low noise are
required.
The MBR30100C is available in standard TO-220-3,
TO-220-3 (2) and TO-220F-3 packages.
Features
High Surge Capacity
• 150°C Operating Junction Temperature
• 30A Total (15A Per Diode Leg)
• Guard-ring for Stress Protection
• Pb-free Packages are available
Main Product Characteristics
IF(AV)
VRRM
TJ
VF(max)
2×15A
100V
150°C
0.75V
Mechanical Characteristics
Case: Epoxy, Molded
• Epoxy Meets UL 94V-0 @ 0.125in.
• Weight (Approximately):
1.9Grams (TO-220-3, TO-220-3 (2) and
TO-220F-3)
• Finish: All External Surfaces Corrosion
Resistant and Terminal
• Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
Applications
• Power Supply Output Rectification
• Power Management
• Instrumentation
TO-220F-3
TO-220-3 (Optional)
TO-220-3 (2)
Figure 1. Package Types of MBR30100C
Mar. 2011 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
1






MBR30100C Datasheet, Funktion
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Typical Performance Characteristics
Data Sheet
MBR30100C
100
10
o
T =150 C
J
1
T =125oC
J
0.1
o
T =25 C
J
0.01
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
10000
1000
100
10
o
T =150 C
J
o
T =125 C
J
1
0.1
0.01
0
o
T =25 C
J
20 40 60 80
Reverse Voltage (V)
100
Figure 4. Typical Forward Voltage Per Diode
Figure 5. Typical Reverse Current Per Diode
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
100 105 110 115 120 125 130 135 140 145 150 155
Case Temperature (oC)
Figure 6. Average Forward Current vs.
Case Temperature (Square, Per Diode)
Mar. 2011 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
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