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Teilenummer | MBR2045C |
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Beschreibung | HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER | |
Hersteller | BCD | |
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Gesamt 9 Seiten Data Sheet
HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER
MBR2045C
General Description
Main Product Characteristics
High efficiency dual Schottky rectifier suited for
switch mode power supplies and other power convert-
ers. This device is intended for use in medium voltage
operation, and particularly, in high frequency circuits
where low switching losses and low noise are required.
IF(AV)
VRRM
TJ
VF(max)
2*10A
45V
150oC
0.57V
MBR2045C is available in TO-220-3 and TO-220F-3
packages.
Features
· Low Forward Voltage: 0.57V @125oC
· Low Power Loss/High Efficiency
· 150oC Operating Junction Temperature
· 20 A Total (10A Each Diode Leg)
· Guard-Ring for Stress Protection
· High Surge Capacity
· Pb-Free Package
Applications
· Power Supply Output Rectification
· Power Management
· Instrumentation
Mechanical Characteristics
· Case: Epoxy, Molded
· Epoxy Meets UL 94 V-0 @ 0.125 in
· Weight (Approximately):
1.9 Grams (TO-220-3, TO-220F-3)
· Finish: All External Surfaces Corrosion Resistant
and Terminal
· Leads are Readily Solderable
· Lead Temperature for Soldering Purposes:
260oC Maximumfor 10 Seconds
Jul. 2008 Rev. 1. 1
TO-220-3
TO-220F-3
Figure 1. Package Types of MBR2045C
BCD Semiconductor Manufacturing Limited
1
HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER
Typical Performance Characteristics (Continued)
1000
800
600
400
200
0
0
TJ=25oC
10 20 30
VR, Reverse Voltage (V)
Figure 6. Capacitance
Data Sheet
MBR2045C
40
14
12
10
8
6
Square
4
2
0
100 110 120 130 140 150 160
Case Temperature (oC)
Figure 7. Average Forward Current vs. Case Temperature (Square, Each Diode)
Jul. 2008 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
6
6 Page | ||
Seiten | Gesamt 9 Seiten | |
PDF Download | [ MBR2045C Schematic.PDF ] |
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