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PDF MBR10200C Data sheet ( Hoja de datos )
| Número de pieza | MBR10200C | |
| Descripción | HIGH VOLTAGE POWER SCHOTTKY RECTIFIER | |
| Fabricantes | BCD | |
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Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR10200C
General Description
Main Product Characteristics
High voltage dual schottky rectifier suited for switch
mode power supplies and other power converters. This
device is intended for use in medium voltage opera-
tion, and particularly, in high frequency circuits where
low switching losses and low noise are required.
MBR10200C is available in TO-220-3, TO-220-3 (2)
and TO-220F-3 packages.
IF(AV)
VRRM
TJ
VF(max)
2×5A
200V
150oC
0.85V
Features
· High Surge Capacity
· 150oC Operating Junction Temperature
· 10A Total (5A Each Diode Leg)
· Guard-ring for Stress Protection
· Pb-free Package
Applications
· Power Supply Output Rectification
· Power Management
· Instrumentation
Mechanical Characteristics
· Case: Epoxy, Molded
· Epoxy Meets UL 94V-0 @ 0.125in.
· Weight (Approximately):
1.9Grams (TO-220-3, TO-220-3 (2) and
TO-220F-3)
· Finish: All External Surfaces Corrosion Resistant
and Terminal
· Leads are Readily Solderable
· Lead Temperature for Soldering Purposes:
260oC Maximum for 10 Seconds
TO-220F-3
TO-220-3 (Optional)
TO-220-3 (2)
Figure 1. Package Types of MBR10200C
Mar. 2011 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
1
1 page  
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Electrical Characteristics (Each Diode Leg)
Parameter
Condition
Maximum Instantaneous
Voltage Drop (Note 3)
Forward IF=5A, TC=25oC
IF=5A, TC=125oC
Maximum Instantaneous Reverse Cur- Rated DC Voltage, TC=25oC
rent (Note 3)
Rated DC Voltage, TC=125oC
Symbol
VF
IR
Note 3: Pulse Test: Pulse Width=300µs, Duty Cycle≤2.0%.
Data Sheet
MBR10200C
Value
0.95
0.85
0.15
15
Unit
V
mA
Mar. 2011 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
5
5 Page 
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
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11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet MBR10200C.PDF ] | |
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