Datenblatt-pdf.com


KAE-08151 Schematic ( PDF Datasheet ) - ON Semiconductor

Teilenummer KAE-08151
Beschreibung EMCCD Image Sensor
Hersteller ON Semiconductor
Logo ON Semiconductor Logo 




Gesamt 30 Seiten
KAE-08151 Datasheet, Funktion
KAE-08151
Advance Information
2856 (H) x 2856 (V) Interline
Transfer EMCCD Image Sensor
The KAE−08151 Image Sensor is a 8.1 Mp, 4/3format, Interline
Transfer EMCCD image sensor that provides exceptional imaging
performance in extreme low light applications. Each of the sensor’s
four outputs incorporates both a conventional horizontal CCD register
and a high gain EMCCD register.
An intra-scene switchable gain feature samples each charge packet
on a pixel-by-pixel basis. This enables the camera system to determine
whether the charge will be routed through the normal gain output or
the EMCCD output based on a user selectable threshold. This feature
enables imaging in extreme low light, even when bright objects are
within a dark scene, allowing a single camera to capture quality
images from sunlight to starlight.
This image sensor is based on an advanced 5.5-micron Interline
Transfer CCD Platform, and features extended dynamic range,
excellent imaging performance, and a flexible readout architecture
that enables use of 1, 2, or 4 outputs. A vertical overflow drain
structure suppresses image blooming, provides excellent MTF, and
enables electronic shuttering for precise exposure.
Table 1. GENERAL SPECIFICATIONS
Parameter
Typical Value
Architecture
Interline CDD; with EMCCD
Total Number of Pixels
2880 (H) × 2880 (V)
Number of Effective Pixels
2928 (H) × 2904 (V)
Number of Active Pixels
2856 (H) × 2856 (V)
Pixel Size
5.5 mm(H) × 5.5 mm (V)
Active Image Size
15.71 mm (H) × 15.71 mm (V)
22.22 mm (Diagonal)
4/3Optical Format
Aspect Ratio
1:1
Number of Outputs
Charge Capacity
Output Sensitivity
1, 2, or 4
20,000 e
44 mV/e
Quantum Sensitivity
Mono/Color (RGB)
50% / 33%, 41%, 43%
Readout Noise (20 MHz)
Normal Mode (1× Gain)
Intra-Scene Mode (20× Gain)
9 erms
< 1 erms
Dark Current (0°C)
Photodiode, VCCD
< 0.1, 6 e/s
Dynamic Range
Normal Mode (1× Gain)
Intra-Scene Mode (20× Gain)
66 dB
86 dB
Charge Transfer Efficiency
0.999999
Blooming Suppression
> 1000 X
Smear
Image Lag
−100 dB
< 1 e
Maximum Pixel Clock Speed
40 MHz
Maximum Frame Rate
Normal Mode, Intra-Scene Mode
14 fps (40 MHz), 8 fps (20 MHz)
Package Type
155 Pin PGA
Cover Glass
Clear Glass, Taped
NOTE: All Parameters are specified at T = −10°C unless otherwise noted.
www.onsemi.com
Figure 1. KAE−08151 Interline
Transfer EMCCD Image Sensor
Features
Intra-Scene Switchable Gain
Wide Dynamic Range
Low Noise Architecture
Exceptional Low Light Imaging
Global Shutter
Excellent Image Uniformity and MTF
Bayer Color Pattern and Monochrome
Applications
Surveillance
Scientific Imaging
Medical Imaging
Intelligent Transportation
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
This document contains information on a new
product. Specifications and information herein
are subject to change without notice.
This document, and the information contained herein,
is CONFIDENTIAL AND PROPRIETARY and the
property of Semiconductor Components Industries,
LLC., dba ON Semiconductor. It shall not be used,
published, disclosed or disseminated outside of the
Company, in whole or in part, without the written
permission of ON Semiconductor. Reverse
engineering of any or all of the information contained
herein is strictly prohibited.
E 2016, SCILLC. All Rights Reserved.
© Semiconductor Components Industries, LLC, 2016
May, 2016 − Rev. P2
1
Publication Order Number:
KAE−08151/D






KAE-08151 Datasheet, Funktion
CONFIDENTIAL AND PROPRIETARY
NOT FOR PUBLIC RELEASE
Table 3. PIN DESCRIPTION (continued)
Pin No.
Label
E4 GND
F21 VDD1d
F22 VOUT1d
E21 VSS1d
E20 RG1d
D20 H2Xd
F20 VDD2d
F19 VOUT2d
A6 VDD2a
C6 H2Xa
B6 RG1a
B5 VSS1a
A5 VOUT1a
A4 VDD1a
E25 GND
F25 GND
B3 V4B
C3 V3B
C4 V2B
C5 V1B
B1 TD−
C1 TD+
C2 ID
A3 VDD15ac
B2 ESD
A2 +9 V
E2 GND
F2 V2B
E22 GND
D5 V1T
D4 V2T
D3 V3T
E3 V4T
B25 GND
F4 VDD1c
F5 VOUT1c
E5 VSS1c
E6 RG1c
D6 H2Xc
F6 VDD2c
F7 VOUT2c
E18 GND
D8 H2SW2c
D7 H2SW3c
F8 H2Lc
E7 RG23c
E13 GND
KAE−08151
Description
Ground
Amplifier 1 Supply, Quadrant d
Amplifier 1 Output, Quadrant d
Amplifier 1 Return, Quadrant d
Amplifier 1 Reset, Quadrant d
Floating Gate Exit HCCD Gate, Quadrant d
Amplifier 2 Supply, Quadrant d
Video Output 2, Quadrant d
Amplifier 2 Supply, Quadrant a
Floating Gate Exit HCCD Gate, Quadrant a
Amplifier 1 Reset, Quadrant a
Amplifier 1 Return, Quadrant a
Video Output 1, Quadrant a
Amplifier 1 Supply, Quadrant a
Ground
Ground
VCCD Bottom Phase 4
VCCD Bottom Phase 3
VCCD Bottom Phase 2
VCCD Bottom Phase 1
Temperature Sensor Negative Bias
Temperature Sensor Positive Bias
Device ID
+15 V Supply
+9 V Supply
Ground
VCCD Bottom Phase 2
Ground
VCCD Top Phase 1
VCCD Top Phase 2
VCCD Top Phase 3
VCCD Top Phase 4
Ground
Amplifier 1 Supply, Quadrant c
Video Output 1, Quadrant c
Amplifier 1 Return, Quadrant c
Amplifier 1 Reset, Quadrant c
Floating Gate Exit HCCD Gate, Quadrant c
Amplifier 2 Supply, Quadrant c
Video Output 2, Quadrant c
Ground
HCCD Output 2 Selector, Quadrant c
HCCD Output 3 Selector, Quadrant c
HCCD Last Gate, Outputs 1, 2 and 3, Quadrant c
Amplifier 2 and 3 Reset, Quadrant c
Ground
www.onsemi.com
6

6 Page









KAE-08151 pdf, datenblatt
CONFIDENTIAL AND PROPRIETARY
NOT FOR PUBLIC RELEASE
KAE−08151
Table 9. DC BIAS OPERATING CONDITIONS
Description
Pins
Symbol
Min.
Nom.
Max.
Maximum
Unit DC Current
Output Amplifier Return
VSS1(a,b,c,d)
VSS1
−8.3
−8.0
−7.7 V
4 mA
Output Amplifier Supply
VDD1(a,b,c,d)
VDD1
4.5
5.0
6.0 V 15 mA
Output Amplifier Supply
VDD2(a,b,c,d),
VDD3(a,b,c,d)
VDD
+14.7
+15.0
+15.3
V
37.0 mA
Supply Voltage (Note 1)
VDD15ac,
VDD15bd
VDD2,
VDD3
+14.7
+15.0
+15.3
V
9 mA
Ground
GND
GND
0.0
0.0
0.0 V 17.0 mA
Substrate (Note 2)
SUB
VSUB
6.0 VSUBREF VSUBREF V
Up to 1 mA
− 0.5
+ 28
(Determined by
Photocurrent)
ESD Protection Disable
ESD
ESD
−8.3
−8.0
−7.7 V
2 mA
Output Bias Current
VOUT1(a,b,c,d),
VOUT2(a,b,c,d),
VOUT3(a,b,c,d)
IOUT
2.0
2.5
5.0 mA
1. VDD15ac and VDDD15bd bias pins must be maintained at 15 V during operation.
2. For each image sensor the voltage output on the VSUBREF pin is programmed to be one diode drop, 0.5 V, above the nominal SUB voltage.
The voltage output on VSUBREF is unique to each image sensor and may vary from 6.5 to 10.0 V. The output impedance of VSUBREF
is approximately 100k. The applied VSUB should be one diode drop lower than the VSUBREF value measured on the device, when
VDD2(a,b,c,d) and VDD3(a,b,c,d) are at the specified voltage.
AC Operating Conditions
Clock Levels
Table 10. CLOCK LEVELS
HCCD and RG
Low Level
Amplitude
Pin
Function
Low
Nominal
High
Low
Nominal
High
H2B(a,b,c,d)
Reversible HCCD Barrier 2
−0.2 0.0 +0.2 3.1 3.3 3.6
H1B(a,b,c,d)
Reversible HCCD Barrier 1
−0.2 0.0 +0.2 3.1 3.3 3.6
H2S(a,b,c,d)
Reversible HCCD Storage 2
−0.2 0.0 +0.2 3.1
3.3
3.6
H1S(a,b,c,d)
Reversible HCCD Storage 1
−0.2 0.0 +0.2 3.1
3.3
3.6
H2SW2(a,b,c,d),
H2SW3(a,b,c,d)
HCCD Switch 2 and 3
−0.2 0.0 +0.2 3.1 3.3 3.6
H2L(a,b,c,d)
HCCD Last Gate
−0.2 0.0 +0.2 3.1 3.3 3.6
H2X(a,b,c,d)
Floating Gate Exit
−0.2 0.0 +0.2 6.2 6.6 7.0
RG1(a,b,c,d)
Floating Gate Reset
Cap 3.1 3.3 3.6
RG23(a,b,c,d)
Floating Diffusion Reset
Cap 3.1 3.3 3.6
H1BEM(a,b,c,d)
Multiplier Barrier 1
−0.2 0.0 +0.2 4.6 5.0 5.4
H2BEM(a,b,c,d)
Multiplier Barrier 2
−0.2 0.0 +0.2 4.6 5.0 5.4
H1SEM(a,b,c,d)
Multiplier Storage 1
−0.3 0.0 +0.3 7.0
− 18.0
H2SEM(a,b,c,d)
Multiplier Storage 2
−0.3 0.0 +0.3 7.0
− 18.0
1. HCCD Operating Voltages. There can be no overshoot on any horizontal clock below −0.4 V: the specified absolute minimum. The H1SEM
and H2SEM clock amplitudes need to be software programmable independently for each quadrant to adjust the charge multiplier gain.
2. Reset Clock Operation: The RG1, RG23 signals must be capacitive coupled into the image sensor with a 0.01 mF to 0.1 mF capacitor.
The reset clock overshoot can be no greater than 0.3 V, as shown in Figure 4, below:
www.onsemi.com
12

12 Page





SeitenGesamt 30 Seiten
PDF Download[ KAE-08151 Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
KAE-08151EMCCD Image SensorON Semiconductor
ON Semiconductor

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche