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EFC3C001NUZ Schematic ( Datenblatt PDF ) - ON Semiconductor

Teilenummer EFC3C001NUZ
Beschreibung Power MOSFET
Hersteller ON Semiconductor
Logo ON Semiconductor Logo 



Gesamt 6 Seiten
		
EFC3C001NUZ Datasheet, Funktion
EFC3C001NUZ
Power MOSFET
for 1-2 Cells Lithium-ion Battery Protection
20V, 30m, 6A, Dual N-Channel
This Power MOSFET features a low on-state resistance. This device is
suitable for applications such as power switches of portable machines. Best
suited for 1-2 cells lithium-ion battery applications.
www.onsemi.com
Features
2.5V drive
Common-Drain type
ESD Diode-Protected Gate
Pb-Free, Halogen Free and RoHS compliance
VSSS
20V
RSS(on) Max
30m@ 4.5V
34m@ 3.8V
39m@ 3.1V
56m@ 2.5V
IS Max
6A
Applications
1-2 Cells Lithium-ion Battery Charging and Discharging Switch
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1)
Parameter
Symbol
Value
Unit
Source to Source Voltage
Gate to Source Voltage
Source Current (DC)
Source Current (Pulse)
PW100s, duty cycle1%
Total Dissipation (Note 2)
Junction Temperature
Storage Temperature
VSSS
VGSS
IS
ISP
PT
Tj
Tstg
20
10
6
60
1.6
150
55 to +150
V
V
A
A
W
C
C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
Junction to Ambient (Note 2)
RJA
78.1
Note 2 : Surface mounted on ceramic substrate(5000mm2 0.8mm).
Unit
C/W
ELECTRICAL CONNECTION
N-Channel
4
Rg
3
Rg
2
Rg=500
1 : Source1
2 : Gate1
3 : Gate2
1 4 : Source2
MARKING
WLCSP4, 1.26×1.26 /
EFCP1313-4DG-020
wc
LOT No.
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
June 2016 - Rev. 0
1
Publication Order Number :
EFC3C001NUZ/D






EFC3C001NUZ Datasheet, Funktion
PACKAGE DIMENSIONS
unit : mm
WLCSP4 1.26x1.26 / EFCP1313-4DG-020
CASE 567LM
ISSUE O
EFC3C001NUZ
D AB
PIN 1
REFERENCE
0.03 C
TOP VIEW
E
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
MILLIMETERS
DIM MIN MAX
A 0.18 0.22
b 0.22 0.28
D 1.21 1.31
E 1.21 1.31
e 0.50 BSC
0.03 C
SIDE VIEW
4X b
0.10 M C A B
e
12
43
BOTTOM VIEW
C
SEATING
PLANE
RECOMMENDED
SOLDERING FOOTPRINT*
0.50
PITCH
PACKAGE
OUTLINE
1 : Source1
e 2 : Gate1
3 : Gate2
4 : Source2
A1
0.50
PITCH
4X
0.25
DIMENSIONS: MILLIMETERS
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
Device
EFC3C001NUZTCG
Marking
WC
Package
WLCSP4, 1.26 1.26 /
EFCP1313-4DG-020
(Pb-Free / Halogen Free)
Shipping (Qty / Packing)
5,000 / Tape & Reel
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the EFC3C001NUZ is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects. Please contact sales for use except the designated application.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries
in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other
intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON
Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or
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