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Teilenummer | E50N06 |
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Beschreibung | Power MOSFET ( Transistor ) | |
Hersteller | ESTEK | |
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Gesamt 2 Seiten E 50N06
HEXFET® Power MOSFET
Dynamic dv/dt Rating
175 ْC Operating Temperature
Fast switching
Ease of Paralleling
Simple Drive Requirements
VDSS = 60V
ID25 = 50A
RDS(ON) = 0.022
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50watts. The low
thermal resistance and low package cost of the TO-220 contribute to its
wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter
ID@TC=25 ْC Continuous Drain Current, VGS@10V
ID@TC=100ْC Continuous Drain Current, VGS@10V
IDM Pulsed Drain Current
PD@TC=25ْC Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
EAS Single Pulse Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque,6-32 or M3 screw
Max.
50*
36
200
140
1.0
±20
100
4.5
55 to +175
300(1.6mm from case)
10 Ibf in(1.1N m)
Pin1–Gate
Pin2–Drain
Pin3–Source
Units
A
W
W/ ْC
V
mJ
V/ns
ْC
Thermal Resistance
Parameter
Min. Typ. Max.
RθJC
Junction-to-case
1.0
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
RθJA Junction-to-Ambient
62
Units
ْC/W
1
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ E50N06 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
E50N06 | Power MOSFET ( Transistor ) | ESTEK |
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