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PDF STB3055L2 Data sheet ( Hoja de datos )
| Número de pieza | STB3055L2 | |
| Descripción | N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop | |
| Logotipo |  |
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S T P /B 3055L2
S amHop Microelectronics C orp.
Nov 23, 2004
N-C hannel Logic Level E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
20V
ID R DS (ON) ( m W ) Max
40 @ VGS = 4.5V
18A
60 @ VGS = 2.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
TO-220 and TO-263 P ackage.
D
D
GS
S TB S E R IE S
T O -263(DD-P AK )
G
D
S
S TP S E R IE S
TO-220
G
S
ABS OLUTE MAXIMUM R ATINGS (TC=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous @ TJ=25 C
-P ulsed a
Drain-S ource Diode Forward C urrent
Maximum P ower Dissipation @ Tc=25 C
Operating and S torage Temperature R ange
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient
S ymbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
R JC
R JA
Limit
20
12
18
45
15
50
-55 to 175
3
50
Unit
V
V
A
A
A
W
C
C /W
C /W
1
1 page  
S T P /B 3055L2
4
V DD
V IN R L
D VOUT
VG S
RGEN G
td(on)
VOUT
ton
tr
td(off)
90%
10% INVE R TE D
toff
tf
90%
10%
90%
S
VIN 50%
50%
10%
PULS E WIDTH
F igure 11. S witching T es t C ircuit
F igure 12. S witching Waveforms
2
1
D =0 . 5
0.2
0.1
0.1 0.05
0.02
0.01
S ingle P uls e
0.01
0.01
0.1
1 10 100
S quare Wave P uls e Duration (ms ec)
P DM
t1
t2
1. R JC (t)=r (t) * R JC
2. R JC=S ee Datas heet
3. T JM-T C = P * R JC (t)
4. Duty C ycle, D=t1/t2
1000
10000
F igure 13. Normalized T hermal T rans ient Impedance C urve
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet STB3055L2.PDF ] | |
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